Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites

A. Tsormpatzoglou, D. H. Tassis, C. A. Dimitriadis, L. Dózsa, N. G. Galkin, D. L. Goroshko, V. O. Polyarnyi, E. A. Chusovitin

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Schottky contacts on p -type silicon, with embedded arrays of Β-Fe Si2 nanocrystallites, were studied by current-voltage (I-V), deep level transient spectroscopy (DLTS), and low-frequency noise measurements. Forward I-V characteristics on logarithmic scale indicate that space-charge limited current (SCLC) dominates the carrier transport in these diodes. From an analysis of the SCLC characteristics, we found that two arrays of Β-Fe Si2 nanocrystallites induce a trap level at 320 meV above the valence band edge with concentration of 5× 1014 cm-3, which is in relatively good agreement with the trap detected by DLTS. By inserting ten arrays of Β-Fe Si2 nanocrystallites, two trap levels at 300 and 340 meV with concentrations of 2.6× 1014 and 1.1× 1015 cm-3, respectively, were found from the SCLC analysis. By increasing the number of the inserted arrays of Β-Fe Si2 nanocrystallites from 2 to 10, a trap at 402 meV with concentration of 6.5× 1015 cm-3 has been detected by DLTS, failing to detect the second trap observed by SCLC measurements. The normalized power spectral density SI I2 vs V exhibits a peak at the transition voltage from the trap-filling regime to the SCLC regime, corresponding to a deep trap level. It is demonstrated that the noise technique is more sensitive than the SCLC and DLTS techniques in extracting information about the deep trap parameters.

Original languageEnglish
Article number074313
JournalJournal of Applied Physics
Volume100
Issue number7
DOIs
Publication statusPublished - 2006

Fingerprint

traps
space charge
silicon
spectroscopy
International System of Units
electric potential
noise measurement
electric contacts
diodes
low frequencies
valence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Tsormpatzoglou, A., Tassis, D. H., Dimitriadis, C. A., Dózsa, L., Galkin, N. G., Goroshko, D. L., ... Chusovitin, E. A. (2006). Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites. Journal of Applied Physics, 100(7), [074313]. https://doi.org/10.1063/1.2357642

Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites. / Tsormpatzoglou, A.; Tassis, D. H.; Dimitriadis, C. A.; Dózsa, L.; Galkin, N. G.; Goroshko, D. L.; Polyarnyi, V. O.; Chusovitin, E. A.

In: Journal of Applied Physics, Vol. 100, No. 7, 074313, 2006.

Research output: Contribution to journalArticle

Tsormpatzoglou, A, Tassis, DH, Dimitriadis, CA, Dózsa, L, Galkin, NG, Goroshko, DL, Polyarnyi, VO & Chusovitin, EA 2006, 'Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites', Journal of Applied Physics, vol. 100, no. 7, 074313. https://doi.org/10.1063/1.2357642
Tsormpatzoglou, A. ; Tassis, D. H. ; Dimitriadis, C. A. ; Dózsa, L. ; Galkin, N. G. ; Goroshko, D. L. ; Polyarnyi, V. O. ; Chusovitin, E. A. / Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 7.
@article{4f6cf3ad02574e1da905ce00c3d0b608,
title = "Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites",
abstract = "Schottky contacts on p -type silicon, with embedded arrays of Β-Fe Si2 nanocrystallites, were studied by current-voltage (I-V), deep level transient spectroscopy (DLTS), and low-frequency noise measurements. Forward I-V characteristics on logarithmic scale indicate that space-charge limited current (SCLC) dominates the carrier transport in these diodes. From an analysis of the SCLC characteristics, we found that two arrays of Β-Fe Si2 nanocrystallites induce a trap level at 320 meV above the valence band edge with concentration of 5× 1014 cm-3, which is in relatively good agreement with the trap detected by DLTS. By inserting ten arrays of Β-Fe Si2 nanocrystallites, two trap levels at 300 and 340 meV with concentrations of 2.6× 1014 and 1.1× 1015 cm-3, respectively, were found from the SCLC analysis. By increasing the number of the inserted arrays of Β-Fe Si2 nanocrystallites from 2 to 10, a trap at 402 meV with concentration of 6.5× 1015 cm-3 has been detected by DLTS, failing to detect the second trap observed by SCLC measurements. The normalized power spectral density SI I2 vs V exhibits a peak at the transition voltage from the trap-filling regime to the SCLC regime, corresponding to a deep trap level. It is demonstrated that the noise technique is more sensitive than the SCLC and DLTS techniques in extracting information about the deep trap parameters.",
author = "A. Tsormpatzoglou and Tassis, {D. H.} and Dimitriadis, {C. A.} and L. D{\'o}zsa and Galkin, {N. G.} and Goroshko, {D. L.} and Polyarnyi, {V. O.} and Chusovitin, {E. A.}",
year = "2006",
doi = "10.1063/1.2357642",
language = "English",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Deep levels in silicon Schottky junctions with embedded arrays of Β-FeSi2 nanocrystallites

AU - Tsormpatzoglou, A.

AU - Tassis, D. H.

AU - Dimitriadis, C. A.

AU - Dózsa, L.

AU - Galkin, N. G.

AU - Goroshko, D. L.

AU - Polyarnyi, V. O.

AU - Chusovitin, E. A.

PY - 2006

Y1 - 2006

N2 - Schottky contacts on p -type silicon, with embedded arrays of Β-Fe Si2 nanocrystallites, were studied by current-voltage (I-V), deep level transient spectroscopy (DLTS), and low-frequency noise measurements. Forward I-V characteristics on logarithmic scale indicate that space-charge limited current (SCLC) dominates the carrier transport in these diodes. From an analysis of the SCLC characteristics, we found that two arrays of Β-Fe Si2 nanocrystallites induce a trap level at 320 meV above the valence band edge with concentration of 5× 1014 cm-3, which is in relatively good agreement with the trap detected by DLTS. By inserting ten arrays of Β-Fe Si2 nanocrystallites, two trap levels at 300 and 340 meV with concentrations of 2.6× 1014 and 1.1× 1015 cm-3, respectively, were found from the SCLC analysis. By increasing the number of the inserted arrays of Β-Fe Si2 nanocrystallites from 2 to 10, a trap at 402 meV with concentration of 6.5× 1015 cm-3 has been detected by DLTS, failing to detect the second trap observed by SCLC measurements. The normalized power spectral density SI I2 vs V exhibits a peak at the transition voltage from the trap-filling regime to the SCLC regime, corresponding to a deep trap level. It is demonstrated that the noise technique is more sensitive than the SCLC and DLTS techniques in extracting information about the deep trap parameters.

AB - Schottky contacts on p -type silicon, with embedded arrays of Β-Fe Si2 nanocrystallites, were studied by current-voltage (I-V), deep level transient spectroscopy (DLTS), and low-frequency noise measurements. Forward I-V characteristics on logarithmic scale indicate that space-charge limited current (SCLC) dominates the carrier transport in these diodes. From an analysis of the SCLC characteristics, we found that two arrays of Β-Fe Si2 nanocrystallites induce a trap level at 320 meV above the valence band edge with concentration of 5× 1014 cm-3, which is in relatively good agreement with the trap detected by DLTS. By inserting ten arrays of Β-Fe Si2 nanocrystallites, two trap levels at 300 and 340 meV with concentrations of 2.6× 1014 and 1.1× 1015 cm-3, respectively, were found from the SCLC analysis. By increasing the number of the inserted arrays of Β-Fe Si2 nanocrystallites from 2 to 10, a trap at 402 meV with concentration of 6.5× 1015 cm-3 has been detected by DLTS, failing to detect the second trap observed by SCLC measurements. The normalized power spectral density SI I2 vs V exhibits a peak at the transition voltage from the trap-filling regime to the SCLC regime, corresponding to a deep trap level. It is demonstrated that the noise technique is more sensitive than the SCLC and DLTS techniques in extracting information about the deep trap parameters.

UR - http://www.scopus.com/inward/record.url?scp=33750026420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750026420&partnerID=8YFLogxK

U2 - 10.1063/1.2357642

DO - 10.1063/1.2357642

M3 - Article

AN - SCOPUS:33750026420

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 074313

ER -