Deep level investigation on n-In0.35Ga0.65As/GaAs structures

E. Gombia, R. Mosca, D. Pal, A. Motta, L. Nasi, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

Abstract

We have investigated the deep electronic levels in n-In0.35Ga0.65As epitaxial layers grown by molecular beam epitaxy (MBE) on graded InxGa1 - xAs buffer/GaAs structures. InxGa1 - xAs buffer layers with linear, parabolic and power composition grading law, respectively have been considered. The dependence of the deep levels distribution on the buffer grading law as well as on growth parameters such as the growth temperature and use of As2 or As4 beams is reported.

Original languageEnglish
Pages (from-to)211-215
Number of pages5
JournalSolid-State Electronics
Volume42
Issue number2
DOIs
Publication statusPublished - Mar 16 1998

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Gombia, E., Mosca, R., Pal, D., Motta, A., Nasi, L., Bosacchi, A., & Franchi, S. (1998). Deep level investigation on n-In0.35Ga0.65As/GaAs structures. Solid-State Electronics, 42(2), 211-215. https://doi.org/10.1016/S0038-1101(97)00225-6