DEEP CENTRES AND PHOTOPOLARIZATION IN SbSI-TYPE SEMICONDUCTORS.

D. G. Semak, S. Kökényesi, D. V. Chepur

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Induced impurity photopolarization processes are investigated in SbSI and SbSeI single crystals. It is shown that deep centers not only take part in the photoelectret charge accumulation, but also largely determine the mechanism of its formation. The results of the theoretical analysis of induced impurity photopolarization formation kinetics are presented and a comparison with experiments is made.

Original languageEnglish
Pages (from-to)533-537
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume15
Issue number2
Publication statusPublished - Feb 1973

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Impurities
impurities
Single crystals
Kinetics
single crystals
kinetics
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

DEEP CENTRES AND PHOTOPOLARIZATION IN SbSI-TYPE SEMICONDUCTORS. / Semak, D. G.; Kökényesi, S.; Chepur, D. V.

In: Physica Status Solidi (A) Applied Research, Vol. 15, No. 2, 02.1973, p. 533-537.

Research output: Contribution to journalArticle

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