Deep-brain silicon multielectrodes with surface-modified Pt recording sites

Gergely Marton, Zoltan Fekete, I. Bakos, G. Battistig, Anita Pongracz, Peter Baracskay, G. Juhász, I. Bársony

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Extreme-long (up to 70 mm) Si neural multielectrodes are presented for the first time. Probes with different shaft lengths (15-70 mm) were formed by deep reactive ion etching and have been equipped with Pt recording sites of various configurations. In vivo measurements on rodents indicated good mechanical stability, robust implantation and targeting capability, and high quality signals from different locations of the cerebrum have been recorded. The accompanied tissue damage was characterized by histology. With platinum electroplating, electrical impedance reduction was achieved, the improved charge transfer capability was characterized by cyclic voltammetry.

Original languageEnglish
Title of host publicationProceedings of IEEE Sensors
DOIs
Publication statusPublished - 2012
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan, Province of China
Duration: Oct 28 2012Oct 31 2012

Other

Other11th IEEE SENSORS 2012 Conference
CountryTaiwan, Province of China
CityTaipei
Period10/28/1210/31/12

Fingerprint

Histology
Acoustic impedance
Mechanical stability
Reactive ion etching
Electroplating
Cyclic voltammetry
Charge transfer
Platinum
Brain
Tissue
Silicon
Rodentia

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Deep-brain silicon multielectrodes with surface-modified Pt recording sites. / Marton, Gergely; Fekete, Zoltan; Bakos, I.; Battistig, G.; Pongracz, Anita; Baracskay, Peter; Juhász, G.; Bársony, I.

Proceedings of IEEE Sensors. 2012. 6411325.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marton, G, Fekete, Z, Bakos, I, Battistig, G, Pongracz, A, Baracskay, P, Juhász, G & Bársony, I 2012, Deep-brain silicon multielectrodes with surface-modified Pt recording sites. in Proceedings of IEEE Sensors., 6411325, 11th IEEE SENSORS 2012 Conference, Taipei, Taiwan, Province of China, 10/28/12. https://doi.org/10.1109/ICSENS.2012.6411325
Marton G, Fekete Z, Bakos I, Battistig G, Pongracz A, Baracskay P et al. Deep-brain silicon multielectrodes with surface-modified Pt recording sites. In Proceedings of IEEE Sensors. 2012. 6411325 https://doi.org/10.1109/ICSENS.2012.6411325
Marton, Gergely ; Fekete, Zoltan ; Bakos, I. ; Battistig, G. ; Pongracz, Anita ; Baracskay, Peter ; Juhász, G. ; Bársony, I. / Deep-brain silicon multielectrodes with surface-modified Pt recording sites. Proceedings of IEEE Sensors. 2012.
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