Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide

Z. Zolnai, N. Q. Khánh, T. Lohner, A. Ster, E. Kótai, I. Vickridge, J. Gyulai

Research output: Contribution to journalConference article

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Abstract

500 keV nitrogen implantation at different tilt angles with respect to the c-axis of 6H-SiC was carried out. The tilt angles of irradiation were chosen after 500 keV N+ angular scan measurement. The radiation damage distribution of both Si and C sublattice have been investigated by Backscattering Spectrometry combined with channeling technique (BS/C) using 3550 keV 4He+ ion beam. It has been shown that the radiation damage was reduced significantly by means of channeling implantation. The damage peak in this case locates about 25% deeper compared to that of the random irradiation. Some aspects of the channeling process correlating with damage buildup in the Si and C sublattices are discussed.

Original languageEnglish
Pages (from-to)645-648
Number of pages4
JournalMaterials Science Forum
Volume433-436
Publication statusPublished - Nov 24 2003
EventProceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden
Duration: Sep 2 2002Sep 5 2002

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Keywords

  • Backscattering Spectrometry BS
  • Channeling
  • Ion Implantation
  • Radiation Defects
  • Silicon Carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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