Damage Annealing Behavior in Diatomic Phosphorus Ion Implanted Silicon

G. Q. Yang, L. C. Lu, S. Zou, N. Q. Khanh, M. Fried, E. Kotai, V. Schiller, J. Gyulai

Research output: Contribution to journalArticle

8 Citations (Scopus)


Damaging effect of diatomic phosphorus ions implanted into silicon was compared with that of atomic ions in the range between 25 and 300 keV/atom. Dose was around 1014 ions/cm 2. Target temperature varied between 77 and 533 K. Below and at 300 K the “damage enhancement factor” defined as ratio of damage produced by equivalent molecular and atomic ion implantation varied from 1 to 1.6 depending on incident energy. At elevated implantation temperature this factor increased by almost an order of magnitude. In interpretation of experimental results, fluctuations in damage structure inside the volume of collision cascades was proposed. Conclusions are believed to be relevant for other molecular implantation, e.g. for the BF2+.

Original languageEnglish
Pages (from-to)183-192
Number of pages10
JournalRadiation Effects and Defects in Solids
Issue number1-3
Publication statusPublished - 1990


  • annealing
  • Damage
  • ion implantation
  • molecular ions
  • phosphor in silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Nuclear and High Energy Physics
  • Radiation
  • Condensed Matter Physics

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