Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si schottky contacts

M. Çakar, M. Sadlam, Y. Onganer, Z. Horváth, A. Türüt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metallic potypyrrole polymer/p-Si diodes were studied by current-voltage and capacitance-voltage measurements at room temperature. The diodes exhibited rectifying behaviour with an ideality factor of about 2 and potential barrier height of about 0.54 eV.

Original languageEnglish
Title of host publicationASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages255-256
Number of pages2
ISBN (Print)0780359399, 9780780359390
DOIs
Publication statusPublished - 2000
Event3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia
Duration: Oct 16 2000Oct 18 2000

Other

Other3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
CountrySlovakia
CitySmolenice
Period10/16/0010/18/00

ASJC Scopus subject areas

  • Engineering(all)

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    Çakar, M., Sadlam, M., Onganer, Y., Horváth, Z., & Türüt, A. (2000). Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si schottky contacts. In ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 255-256). [889494] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2000.889494