Current rectification through a single-barrier resonant tunneling quantum structure

G. Papp, M. Di Ventra, C. Coluzza, A. Baldereschi, G. Margaritondo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We propose a simple quantum structure which exhibits resonant tunneling under one bias and simple tunneling under the opposite one, thus acting as a rectifier. The diode consists of a single laterally-indented barrier. Due to its particular conduction-band profile, electrons undergo resonant tunneling when the bias creates a band-profile triangular well which can contain a resonant state aligned to the emitter Fermi energy. A diode with an active layer of ≈ 100 angstrom, realized by AlGaAs/GaAs, has a Rectification Ratio, calculated at the current-peak bias at resonance, of ≈ 100. This value can be enhanced by putting in series several elements of this kind.

Original languageEnglish
Pages (from-to)273-275
Number of pages3
JournalSuperlattices and Microstructures
Volume17
Issue number3
DOIs
Publication statusPublished - 1995

Fingerprint

Resonant tunneling
resonant tunneling
rectification
Diodes
Fermi level
Conduction bands
diodes
rectifiers
profiles
aluminum gallium arsenides
Electrons
conduction bands
emitters
electrons
energy
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Current rectification through a single-barrier resonant tunneling quantum structure. / Papp, G.; Di Ventra, M.; Coluzza, C.; Baldereschi, A.; Margaritondo, G.

In: Superlattices and Microstructures, Vol. 17, No. 3, 1995, p. 273-275.

Research output: Contribution to journalArticle

Papp, G. ; Di Ventra, M. ; Coluzza, C. ; Baldereschi, A. ; Margaritondo, G. / Current rectification through a single-barrier resonant tunneling quantum structure. In: Superlattices and Microstructures. 1995 ; Vol. 17, No. 3. pp. 273-275.
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