Current instabilities in GaAs/InAs self-aggregated quantum dot structures

Zs J. Horváth, P. Frigeri, S. Franchi, Vo Van Tuyen, E. Gombia, R. Mosca, L. Dózsa

Research output: Contribution to journalArticle

6 Citations (Scopus)


Excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombination through defects originated from the formation of QDs. The instabilities are connected with unstable occupation of energy levels induced by the above defects, which depend on temperature and on the current level.

Original languageEnglish
Pages (from-to)222-225
Number of pages4
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - May 8 2002


  • Current instability
  • Defects
  • GaAs/InAs
  • Minority injection
  • Quantum dots
  • Recombination

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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