Current instabilities in GaAs/InAs self-aggregated quantum dot structures

Z. Horváth, P. Frigeri, S. Franchi, Vo Van Tuyen, E. Gombia, R. Mosca, L. Dózsa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombination through defects originated from the formation of QDs. The instabilities are connected with unstable occupation of energy levels induced by the above defects, which depend on temperature and on the current level.

Original languageEnglish
Pages (from-to)222-225
Number of pages4
JournalApplied Surface Science
Volume190
Issue number1-4
DOIs
Publication statusPublished - May 8 2002

Fingerprint

Semiconductor quantum dots
quantum dots
Defects
Electron energy levels
Temperature
defects
minorities
low currents
occupation
indium arsenide
gallium arsenide
energy levels
injection
temperature

Keywords

  • Current instability
  • Defects
  • GaAs/InAs
  • Minority injection
  • Quantum dots
  • Recombination

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Current instabilities in GaAs/InAs self-aggregated quantum dot structures. / Horváth, Z.; Frigeri, P.; Franchi, S.; Van Tuyen, Vo; Gombia, E.; Mosca, R.; Dózsa, L.

In: Applied Surface Science, Vol. 190, No. 1-4, 08.05.2002, p. 222-225.

Research output: Contribution to journalArticle

Horváth, Z. ; Frigeri, P. ; Franchi, S. ; Van Tuyen, Vo ; Gombia, E. ; Mosca, R. ; Dózsa, L. / Current instabilities in GaAs/InAs self-aggregated quantum dot structures. In: Applied Surface Science. 2002 ; Vol. 190, No. 1-4. pp. 222-225.
@article{8297a77d5c8447f18f00f570bda8cf3f,
title = "Current instabilities in GaAs/InAs self-aggregated quantum dot structures",
abstract = "Excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombination through defects originated from the formation of QDs. The instabilities are connected with unstable occupation of energy levels induced by the above defects, which depend on temperature and on the current level.",
keywords = "Current instability, Defects, GaAs/InAs, Minority injection, Quantum dots, Recombination",
author = "Z. Horv{\'a}th and P. Frigeri and S. Franchi and {Van Tuyen}, Vo and E. Gombia and R. Mosca and L. D{\'o}zsa",
year = "2002",
month = "5",
day = "8",
doi = "10.1016/S0169-4332(01)00872-8",
language = "English",
volume = "190",
pages = "222--225",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Current instabilities in GaAs/InAs self-aggregated quantum dot structures

AU - Horváth, Z.

AU - Frigeri, P.

AU - Franchi, S.

AU - Van Tuyen, Vo

AU - Gombia, E.

AU - Mosca, R.

AU - Dózsa, L.

PY - 2002/5/8

Y1 - 2002/5/8

N2 - Excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombination through defects originated from the formation of QDs. The instabilities are connected with unstable occupation of energy levels induced by the above defects, which depend on temperature and on the current level.

AB - Excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombination through defects originated from the formation of QDs. The instabilities are connected with unstable occupation of energy levels induced by the above defects, which depend on temperature and on the current level.

KW - Current instability

KW - Defects

KW - GaAs/InAs

KW - Minority injection

KW - Quantum dots

KW - Recombination

UR - http://www.scopus.com/inward/record.url?scp=0037042037&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037042037&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(01)00872-8

DO - 10.1016/S0169-4332(01)00872-8

M3 - Article

VL - 190

SP - 222

EP - 225

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -