Crystallographically selective nanopatterning of graphene on SiO2

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

Graphene has many advantageous properties, but its lack of an electronic band gap makes this two-dimensional material impractical for many nanoelectronic applications, for example, field-effect transistors. This problem can be circumvented by opening up a confinement-induced gap, through the patterning of graphene into ribbons having widths of a few nanometres. The electronic properties of such ribbons depend on both their size and the crystallographic orientation of the ribbon edges. Therefore, etching processes that are able to differentiate between the zigzag and armchair type edge terminations of graphene are highly sought after. In this contribution we show that such an anisotropic, dry etching reaction is possible and we use it to obtain graphene ribbons with zigzag edges. We demonstrate that the starting positions for the carbon removal reaction can be tailored at will with precision.

Original languageEnglish
Pages (from-to)110-116
Number of pages7
JournalNano Research
Volume3
Issue number2
DOIs
Publication statusPublished - Feb 2010

Fingerprint

Graphite
Graphene
Dry etching
Nanoelectronics
Field effect transistors
Electronic properties
Etching
Energy gap
Carbon

Keywords

  • Atomic force microscopy (AFM)
  • Etching
  • Graphene
  • Nanoribbon
  • Zigzag

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Crystallographically selective nanopatterning of graphene on SiO2. / Nemes-Incze, P.; Magda, Gábor; Kamarás, K.; Bíró, L.

In: Nano Research, Vol. 3, No. 2, 02.2010, p. 110-116.

Research output: Contribution to journalArticle

@article{7b86be2685104606904f99857baf7c42,
title = "Crystallographically selective nanopatterning of graphene on SiO2",
abstract = "Graphene has many advantageous properties, but its lack of an electronic band gap makes this two-dimensional material impractical for many nanoelectronic applications, for example, field-effect transistors. This problem can be circumvented by opening up a confinement-induced gap, through the patterning of graphene into ribbons having widths of a few nanometres. The electronic properties of such ribbons depend on both their size and the crystallographic orientation of the ribbon edges. Therefore, etching processes that are able to differentiate between the zigzag and armchair type edge terminations of graphene are highly sought after. In this contribution we show that such an anisotropic, dry etching reaction is possible and we use it to obtain graphene ribbons with zigzag edges. We demonstrate that the starting positions for the carbon removal reaction can be tailored at will with precision.",
keywords = "Atomic force microscopy (AFM), Etching, Graphene, Nanoribbon, Zigzag",
author = "P. Nemes-Incze and G{\'a}bor Magda and K. Kamar{\'a}s and L. B{\'i}r{\'o}",
year = "2010",
month = "2",
doi = "10.1007/s12274-010-1015-3",
language = "English",
volume = "3",
pages = "110--116",
journal = "Nano Research",
issn = "1998-0124",
publisher = "Press of Tsinghua University",
number = "2",

}

TY - JOUR

T1 - Crystallographically selective nanopatterning of graphene on SiO2

AU - Nemes-Incze, P.

AU - Magda, Gábor

AU - Kamarás, K.

AU - Bíró, L.

PY - 2010/2

Y1 - 2010/2

N2 - Graphene has many advantageous properties, but its lack of an electronic band gap makes this two-dimensional material impractical for many nanoelectronic applications, for example, field-effect transistors. This problem can be circumvented by opening up a confinement-induced gap, through the patterning of graphene into ribbons having widths of a few nanometres. The electronic properties of such ribbons depend on both their size and the crystallographic orientation of the ribbon edges. Therefore, etching processes that are able to differentiate between the zigzag and armchair type edge terminations of graphene are highly sought after. In this contribution we show that such an anisotropic, dry etching reaction is possible and we use it to obtain graphene ribbons with zigzag edges. We demonstrate that the starting positions for the carbon removal reaction can be tailored at will with precision.

AB - Graphene has many advantageous properties, but its lack of an electronic band gap makes this two-dimensional material impractical for many nanoelectronic applications, for example, field-effect transistors. This problem can be circumvented by opening up a confinement-induced gap, through the patterning of graphene into ribbons having widths of a few nanometres. The electronic properties of such ribbons depend on both their size and the crystallographic orientation of the ribbon edges. Therefore, etching processes that are able to differentiate between the zigzag and armchair type edge terminations of graphene are highly sought after. In this contribution we show that such an anisotropic, dry etching reaction is possible and we use it to obtain graphene ribbons with zigzag edges. We demonstrate that the starting positions for the carbon removal reaction can be tailored at will with precision.

KW - Atomic force microscopy (AFM)

KW - Etching

KW - Graphene

KW - Nanoribbon

KW - Zigzag

UR - http://www.scopus.com/inward/record.url?scp=77949285602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949285602&partnerID=8YFLogxK

U2 - 10.1007/s12274-010-1015-3

DO - 10.1007/s12274-010-1015-3

M3 - Article

VL - 3

SP - 110

EP - 116

JO - Nano Research

JF - Nano Research

SN - 1998-0124

IS - 2

ER -