Crystallographic tilting in lattice-mismatched heteroepitaxy

A Dodson-Tsao relaxation approach

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Asymmetric strain relaxation and the concomitant misorientation (tilt) of the lattice planes of the epitaxial layer in lattice-mismatched heterostructures is analyzed theoretically. The kinetic relaxation model of Dodson and Tsao [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)] is extended to the growth on vicinal surfaces. We calculate the equilibrium tilt values as well as the evolution of tilt during strain relaxation as a function of material parameters, initial defect densities, and substrate miscut angle. Literature data are interpreted within the framework of the model.

Original languageEnglish
Pages (from-to)4111-4117
Number of pages7
JournalJournal of Applied Physics
Volume79
Issue number8
Publication statusPublished - Apr 15 1996

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misalignment
defects
kinetics

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Crystallographic tilting in lattice-mismatched heteroepitaxy : A Dodson-Tsao relaxation approach. / Riesz, F.

In: Journal of Applied Physics, Vol. 79, No. 8, 15.04.1996, p. 4111-4117.

Research output: Contribution to journalArticle

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