Crystallographic tilting in high-misfit (100) semiconductor heteroepitaxial systems

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Abstract

A model is presented for the formation of crystallographic tilting (misorientation) in highly mismatched (100) oriented zinc-blende semiconductor heteroepitaxial layers grown on vicinal substrates. The model is based on the asymmetric generation of 60° misfit dislocations upon island coalescence in the initial growth process and the asymmetric strain release at substrate steps, and predicts a correlation between tilt angle and initial growth planarity. Good agreement is found between model and experimental data on the GaAs/Si and other systems. It is also shown that, if the net tilt is small, an azimuthal rotation of the tilt axis may occur, even if the system symmetry would hinder it. The influence of thermal annealing and thermal mismatch on the tilt is discussed as well.

Original languageEnglish
Pages (from-to)425-430
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume14
Issue number2
Publication statusPublished - Mar 1996

Fingerprint

Semiconductor materials
Substrates
Coalescence
Dislocations (crystals)
Zinc
Annealing
misalignment
coalescing
zinc
annealing
symmetry
Hot Temperature
gallium arsenide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

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