Crystallographic orientation dependent etching of graphene layers

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Abstract

Graphene has gripped the scientific community ever since its discovery in 2004, with very promising electronic properties and hopes to integrate graphene into nanoelectronic devices. For graphene to make its way into electronic devices, two major obstacles have to be overcome: reproducible preparation of large area graphene samples and patterning techniques to obtain functional components. In this paper we present a graphene etching technique, which is crystallographic orientation selective and allows for the patterning of graphene layers using a chemical reduction process. The process involves the reduction of the SiO2 support by the carbon in the graphene itself. This reaction only occurs at the sample edges and does not result in the degradation of the graphene crystal lattice itself. However, we have observed evidence of strong hole doping in our etched samples. This etching technique opens up new possibilities in graphene patterning and modification.

Original languageEnglish
Pages (from-to)1241-1245
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume7
Issue number3-4
DOIs
Publication statusPublished - 2010

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graphene
etching
electronics
crystal lattices
degradation
preparation
carbon

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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abstract = "Graphene has gripped the scientific community ever since its discovery in 2004, with very promising electronic properties and hopes to integrate graphene into nanoelectronic devices. For graphene to make its way into electronic devices, two major obstacles have to be overcome: reproducible preparation of large area graphene samples and patterning techniques to obtain functional components. In this paper we present a graphene etching technique, which is crystallographic orientation selective and allows for the patterning of graphene layers using a chemical reduction process. The process involves the reduction of the SiO2 support by the carbon in the graphene itself. This reaction only occurs at the sample edges and does not result in the degradation of the graphene crystal lattice itself. However, we have observed evidence of strong hole doping in our etched samples. This etching technique opens up new possibilities in graphene patterning and modification.",
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T1 - Crystallographic orientation dependent etching of graphene layers

AU - Nemes-Incze, P.

AU - Magda, Gábor

AU - Kamarás, K.

AU - Bíró, L.

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