Crystal orientation dependence of residual disorder in As-implanted Si

H. Müller, W. K. Chu, J. Gyulai, J. W. Mayer, T. W. Sigmon, T. R. Cass

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Abstract

MeV 4He+ channeling effect measurements combined with transmission electron microscopy (TEM) and Hall effect measurements were employed to study the orientation dependence of the amount of damage remaining after anneal of 200-keV As-implanted Si. The residual disorder after high-temperature annealing was found to depend upon the crystal orientation. For 〈111〉-oriented Si, anomalously high residual disorder was found in the dose region of 1015/cm2 by both the TEM and channeling measurements. Significantly less disorder was found in 〈100〉- and 〈110〉-oriented Si, the latter exhibiting essentially no residual disorder. The electrical activity of the implanted layer was consistent with the orientation dependence observed.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalApplied Physics Letters
Volume26
Issue number6
DOIs
Publication statusPublished - Dec 1 1975

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Müller, H., Chu, W. K., Gyulai, J., Mayer, J. W., Sigmon, T. W., & Cass, T. R. (1975). Crystal orientation dependence of residual disorder in As-implanted Si. Applied Physics Letters, 26(6), 292-294. https://doi.org/10.1063/1.88161