MeV 4He+ channeling effect measurements combined with transmission electron microscopy (TEM) and Hall effect measurements were employed to study the orientation dependence of the amount of damage remaining after anneal of 200-keV As-implanted Si. The residual disorder after high-temperature annealing was found to depend upon the crystal orientation. For 〈111〉-oriented Si, anomalously high residual disorder was found in the dose region of 1015/cm2 by both the TEM and channeling measurements. Significantly less disorder was found in 〈100〉- and 〈110〉-oriented Si, the latter exhibiting essentially no residual disorder. The electrical activity of the implanted layer was consistent with the orientation dependence observed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)