Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes

A. Nemcsics, Ch Heyn, L. Tóth, L. Dobos, A. Stemmann, W. Hansen

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We investigate strain-free GaAs quantum dots (QDs) fabricated by filling of nanoholes in semiconductor surfaces. The nanoholes are created in a self-organized fashion by local droplet etching with Al droplets as etchants. High resolution transmission electron microscopy (TEM) demonstrates that the quantum dots are free of extended defects. Elemental mapping using local electron energy loss spectroscopy (EELS) shows that the walls surrounding the nanohole openings consist of AlAs. This result confirms that the walls are optically inactive.

Original languageEnglish
Pages (from-to)58-61
Number of pages4
JournalJournal of Crystal Growth
Volume335
Issue number1
DOIs
Publication statusPublished - Nov 15 2011

Fingerprint

Semiconductor quantum dots
quantum dots
Transmission electron microscopy
transmission electron microscopy
etchants
Electron energy loss spectroscopy
High resolution transmission electron microscopy
Etching
energy dissipation
etching
electron energy
Semiconductor materials
Defects
high resolution
defects
spectroscopy
gallium arsenide

Keywords

  • A1. Etching
  • A1. Nanostructures
  • A3. Molecular beam epitaxy
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes. / Nemcsics, A.; Heyn, Ch; Tóth, L.; Dobos, L.; Stemmann, A.; Hansen, W.

In: Journal of Crystal Growth, Vol. 335, No. 1, 15.11.2011, p. 58-61.

Research output: Contribution to journalArticle

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AU - Hansen, W.

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