Correlation of the structural and optical properties of GaN grown on vicinal (0 0 1) GaAs substrates with the plasma-assisted MBE growth conditions

A. Georgakilas, K. Amimer, P. Tzanetakis, Z. Hatzopoulos, M. Cengher, B. Pecz, Zs Czigany, L. Toth, M. V. Baidakova, A. V. Sakharov, V. Yu Davydov

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Molecular beam epitaxy, using a radio frequency nitrogen plasma source, was investigated for the direct growth of GaN thin films on vicinal (0 0 1) GaAs substrates. It has been found possible to grow GaN thin films with various types of crystal structure. Cubic (0 0 1) GaN with epitaxial relationship to the GaAs substrate could be grown without GaAs nitridation and under stoichiometric N/Ga flux ratio conditions. Hexagonal mixing in the cubic GaN films occurred mainly as domains with the [0 0 0 1] oriented parallel to the GaAs surface normal. Their origin was related to irregularities at the GaAs surface, produced by interaction with the N-beam. Layers which exhibited intense 17 K photoluminescence with the main peak at approximately 3.42 eV, presented a polycrystalline hexagonal structure with a domain width of several 100 nm. These layers did not exhibit a "yellow-band" luminescence.

Original languageEnglish
Pages (from-to)410-414
Number of pages5
JournalJournal of Crystal Growth
Volume227-228
DOIs
Publication statusPublished - Jul 1 2001
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: Sep 11 2000Sep 15 2000

Keywords

  • A1. Crystal structure
  • A1. Interfaces
  • A1. Substrates
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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