Correlation between the antisite pair and the DI center in SiC

A. Gali, P. Deák, E. Rauls, N. T. Son, I. G. Ivanov, F. H.C. Carlsson, E. Janzén, W. J. Choyke

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Abstract

The DI low temperature photoluminescence center is a well-known defect stable up to 1700 °C annealing in SiC, still its structure is not yet known. Combining experimental and theoretical studies, in this paper we will show that the properties of an antisite pair can reproduce the measured one-electron level position and local vibration modes of the DI center, and are consistent with other experimental findings as well. We give theoretical values of the hyperfine constants of the antisite pair in its paramagnetic state as a means to confirm a model.

Original languageEnglish
Article number155203
Pages (from-to)1552031-1552035
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number15
Publication statusPublished - Apr 1 2003

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Gali, A., Deák, P., Rauls, E., Son, N. T., Ivanov, I. G., Carlsson, F. H. C., Janzén, E., & Choyke, W. J. (2003). Correlation between the antisite pair and the DI center in SiC. Physical Review B - Condensed Matter and Materials Physics, 67(15), 1552031-1552035. [155203].