Correlation between material composition, processing, chemical bonding state, and electrochemical migration failure rate in isolating compounds of high density microelectronics systems

G. Harsányi, Zsolt Illyefalvi-Vitez, W. Kinzy Jones

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Citations (Scopus)

Abstract

Metals can exhibit dendritic short-circuit growth caused by electrochemical migration in conductor-insulator structures, which may result in failures and reliability problems in microcircuits. The classical model of electrochemical migration has been well known for several decades. This process is a transport of metal ions between two metallization stripes under bias through a continuous aqueous electrolyte. Due to the electrodeposition at the cathode, dendrites and dendrite-like deposits are formed. Ultimately, such a deposit can lead to a short circuit in the device and can cause catastrophic failure. A few anomalous and newly discovered phenomena have initiated to perform some revisions and to add supplementary models to the conventional one: Recent investigations have demonstrated that not only metallic components, but also oxides from the isolating layers can take part in the formation of migrated shorts, after a chemical reduction process. Material design aspects need to clarify the correlation between material composition, processing, chemical bonding state, and electrochemical migration failure rate in isolating compounds: this is the scope of the present study.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherIEEE
Pages765-771
Number of pages7
Publication statusPublished - 1996
EventProceedings of the 1996 IEEE 46th Electronic Components & Technology Conference, ECTC - Orlando, FL, USA
Duration: May 28 1996May 31 1996

Other

OtherProceedings of the 1996 IEEE 46th Electronic Components & Technology Conference, ECTC
CityOrlando, FL, USA
Period5/28/965/31/96

Fingerprint

Microelectronics
Short circuit currents
Lead deposits
Processing
Metallizing
Chemical analysis
Electrodeposition
Metal ions
Cathodes
Electrolytes
Oxides
Metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Harsányi, G., Illyefalvi-Vitez, Z., & Jones, W. K. (1996). Correlation between material composition, processing, chemical bonding state, and electrochemical migration failure rate in isolating compounds of high density microelectronics systems. In Proceedings - Electronic Components and Technology Conference (pp. 765-771). IEEE.

Correlation between material composition, processing, chemical bonding state, and electrochemical migration failure rate in isolating compounds of high density microelectronics systems. / Harsányi, G.; Illyefalvi-Vitez, Zsolt; Jones, W. Kinzy.

Proceedings - Electronic Components and Technology Conference. IEEE, 1996. p. 765-771.

Research output: Chapter in Book/Report/Conference proceedingChapter

Harsányi, G, Illyefalvi-Vitez, Z & Jones, WK 1996, Correlation between material composition, processing, chemical bonding state, and electrochemical migration failure rate in isolating compounds of high density microelectronics systems. in Proceedings - Electronic Components and Technology Conference. IEEE, pp. 765-771, Proceedings of the 1996 IEEE 46th Electronic Components & Technology Conference, ECTC, Orlando, FL, USA, 5/28/96.
Harsányi, G. ; Illyefalvi-Vitez, Zsolt ; Jones, W. Kinzy. / Correlation between material composition, processing, chemical bonding state, and electrochemical migration failure rate in isolating compounds of high density microelectronics systems. Proceedings - Electronic Components and Technology Conference. IEEE, 1996. pp. 765-771
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