Correlation between initial growth planarity and epilayer tilting in the vicinal GaAs/Si system

F. Riesz, J. Varrio, A. Pesek, K. Lischka

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Epilayer tilting in GaAs epilayers grown by molecular beam epitaxy (MBE) on vicinal Si substrates was studied by X-ray diffraction and was related to the initial growth planarity. MBE GaAs, MEE (migration-enhanced epitaxy) GaAs and MEE AlAs buffers resulted in increasing planarity in this order, as revealed by reflection high-energy electron diffraction. The measured tilt is decomposed to coherent and misfit-dislocation (MD) parts. Increasing planarity resulted in decreased MD tilts. The results are explained with the generation of 60° MDs upon island coalescence and asymmetric stress release at substrate surface steps.

Original languageEnglish
Pages (from-to)248-251
Number of pages4
JournalApplied Surface Science
Volume75
Issue number1-4
DOIs
Publication statusPublished - Jan 2 1994

Fingerprint

Epilayers
Dislocations (crystals)
Epitaxial growth
Molecular beam epitaxy
epitaxy
Reflection high energy electron diffraction
Substrates
molecular beam epitaxy
Coalescence
X ray diffraction
high energy electrons
coalescing
Buffers
electron diffraction
buffers
diffraction
gallium arsenide
x rays

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Correlation between initial growth planarity and epilayer tilting in the vicinal GaAs/Si system. / Riesz, F.; Varrio, J.; Pesek, A.; Lischka, K.

In: Applied Surface Science, Vol. 75, No. 1-4, 02.01.1994, p. 248-251.

Research output: Contribution to journalArticle

Riesz, F. ; Varrio, J. ; Pesek, A. ; Lischka, K. / Correlation between initial growth planarity and epilayer tilting in the vicinal GaAs/Si system. In: Applied Surface Science. 1994 ; Vol. 75, No. 1-4. pp. 248-251.
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