Correction factor for resistivity and Hall mobility measurement of two-layer structures by spreading resistance techniques

L. Gútai, T. Vicsek

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The spreading resistance of a circular disc contact located on a two-layer semiconductor structure, and its relative change due to magnetic field has been determined, with the magnetic field perpendicular to the contact face, and with the physical magnetoresistance zero in both layers. The correct value of the spreading resistance differs from the result obtained by the usual approximation, especially if the contact diameter is comparable with the thickness of the upper layer. The conditions are given when the relative change in resistance due to the magnetic field is determined by the mobility in the upper layer only. The results show the applicability of the spreading magnetoresistance technique in determining the Hall mobility in a two-layer structure.

Original languageEnglish
Pages (from-to)93-97
Number of pages5
JournalSolid-State Electronics
Volume18
Issue number1
DOIs
Publication statusPublished - 1975

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Hall mobility
Magnetoresistance
Magnetic fields
electrical resistivity
magnetic fields
Semiconductor materials
approximation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "The spreading resistance of a circular disc contact located on a two-layer semiconductor structure, and its relative change due to magnetic field has been determined, with the magnetic field perpendicular to the contact face, and with the physical magnetoresistance zero in both layers. The correct value of the spreading resistance differs from the result obtained by the usual approximation, especially if the contact diameter is comparable with the thickness of the upper layer. The conditions are given when the relative change in resistance due to the magnetic field is determined by the mobility in the upper layer only. The results show the applicability of the spreading magnetoresistance technique in determining the Hall mobility in a two-layer structure.",
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AU - Vicsek, T.

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AB - The spreading resistance of a circular disc contact located on a two-layer semiconductor structure, and its relative change due to magnetic field has been determined, with the magnetic field perpendicular to the contact face, and with the physical magnetoresistance zero in both layers. The correct value of the spreading resistance differs from the result obtained by the usual approximation, especially if the contact diameter is comparable with the thickness of the upper layer. The conditions are given when the relative change in resistance due to the magnetic field is determined by the mobility in the upper layer only. The results show the applicability of the spreading magnetoresistance technique in determining the Hall mobility in a two-layer structure.

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