Cooperative charge disproportionation of defects in amorphous semiconductors

P. Fazekas, E. Tosatti

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Defect centers in amorphous semiconductors with three possible states of charge (+, 0, and -) can be modeled with an antiferromagnetic S = 1 Ising Hamiltonian in an external field. We have studied this model on a one-dimensional lattice with first neighbor interactions. A clear charge disproportionation is obtained as a function of temperature for a wide range of parameters. The relevance of our finding to the ESR behavior of a-As, and possibly also the photoluminescence of a-Si:H, and to field effect behavior of chalcogenide glasses is pointed out.

Original languageEnglish
Pages (from-to)859-863
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume35-36
Issue numberPART 2
DOIs
Publication statusPublished - 1980

Fingerprint

Amorphous semiconductors
Hamiltonians
amorphous semiconductors
Paramagnetic resonance
Photoluminescence
Glass
Defects
defects
photoluminescence
Temperature
glass
interactions
temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Cooperative charge disproportionation of defects in amorphous semiconductors. / Fazekas, P.; Tosatti, E.

In: Journal of Non-Crystalline Solids, Vol. 35-36, No. PART 2, 1980, p. 859-863.

Research output: Contribution to journalArticle

@article{674b9eac1b534cfea353bdd2a2ad69ef,
title = "Cooperative charge disproportionation of defects in amorphous semiconductors",
abstract = "Defect centers in amorphous semiconductors with three possible states of charge (+, 0, and -) can be modeled with an antiferromagnetic S = 1 Ising Hamiltonian in an external field. We have studied this model on a one-dimensional lattice with first neighbor interactions. A clear charge disproportionation is obtained as a function of temperature for a wide range of parameters. The relevance of our finding to the ESR behavior of a-As, and possibly also the photoluminescence of a-Si:H, and to field effect behavior of chalcogenide glasses is pointed out.",
author = "P. Fazekas and E. Tosatti",
year = "1980",
doi = "10.1016/0022-3093(80)90308-7",
language = "English",
volume = "35-36",
pages = "859--863",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "PART 2",

}

TY - JOUR

T1 - Cooperative charge disproportionation of defects in amorphous semiconductors

AU - Fazekas, P.

AU - Tosatti, E.

PY - 1980

Y1 - 1980

N2 - Defect centers in amorphous semiconductors with three possible states of charge (+, 0, and -) can be modeled with an antiferromagnetic S = 1 Ising Hamiltonian in an external field. We have studied this model on a one-dimensional lattice with first neighbor interactions. A clear charge disproportionation is obtained as a function of temperature for a wide range of parameters. The relevance of our finding to the ESR behavior of a-As, and possibly also the photoluminescence of a-Si:H, and to field effect behavior of chalcogenide glasses is pointed out.

AB - Defect centers in amorphous semiconductors with three possible states of charge (+, 0, and -) can be modeled with an antiferromagnetic S = 1 Ising Hamiltonian in an external field. We have studied this model on a one-dimensional lattice with first neighbor interactions. A clear charge disproportionation is obtained as a function of temperature for a wide range of parameters. The relevance of our finding to the ESR behavior of a-As, and possibly also the photoluminescence of a-Si:H, and to field effect behavior of chalcogenide glasses is pointed out.

UR - http://www.scopus.com/inward/record.url?scp=0018334889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018334889&partnerID=8YFLogxK

U2 - 10.1016/0022-3093(80)90308-7

DO - 10.1016/0022-3093(80)90308-7

M3 - Article

AN - SCOPUS:0018334889

VL - 35-36

SP - 859

EP - 863

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - PART 2

ER -