Controlling ion transport through nanopores: modeling transistor behavior

Eszter Mádai, Bartłomiej Matejczyk, András Dallos, Mónika Valiskó, D. Boda

Research output: Contribution to journalArticle

6 Citations (Scopus)


We present a modeling study of a nanopore-based transistor computed by a mean-field continuum theory (Poisson-Nernst-Planck, PNP) and a hybrid method including particle simulation (Local Equilibrium Monte Carlo, LEMC) that is able to take ionic correlations into account including the finite size of ions. The model is composed of three regions along the pore axis with the left and right regions determining the ionic species that is the main charge carrier, and the central region tuning the concentration of that species and, thus, the current flowing through the nanopore. We consider a model of small dimensions with the pore radius comparable to the Debye-screening length (RporeD ≈ 1), which, together with large surface charges provides a mechanism for creating depletion zones and, thus, controlling ionic current through the device. We report the scaling behavior of the device as a function of the RporeD parameter. Qualitative agreement between PNP and LEMC results indicates that mean-field electrostatic effects predominantly determine device behavior.

Original languageEnglish
Pages (from-to)24156-24167
Number of pages12
JournalPhysical Chemistry Chemical Physics
Issue number37
Publication statusPublished - Jan 1 2018

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Fingerprint Dive into the research topics of 'Controlling ion transport through nanopores: modeling transistor behavior'. Together they form a unique fingerprint.

  • Cite this