Contrast factors of irradiation-induced dislocation loops in hexagonal materials

L. Balogh, Fei Long, Mark R. Daymond

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Irradiation-induced defects, such as dislocation loops, significantly affect the mechanical properties of structural alloys, altering slip and influencing creep and growth. As a consequence, the quantitative characterization of irradiation-influenced defect structures as a function of dose, thermal treatments and/or cold work is essential for models which predict changes in mechanical properties due to the accumulation of irradiation defects. Whole pattern diffraction line profile analysis (DLPA) is a modern tool for microstructure characterization based on first-principles physical models, well established for dislocation density measurements in plastically deformed materials. However, the DLPA procedures that have been tailored for deformed materials account for the strain anisotropy of hexagonal crystals with theoretical contrast factors calculated specifically for dislocation types generated by plasticity which, if directly applied to irradiated materials, will inherently introduce inaccuracies. In an effort to specifically address dislocation structures consisting of irradiation defects, a method was developed to calculate theoretical contrast factors for any general elliptically shaped dislocation loop. The values of the contrast factors are calculated and compiled in tables for six common elliptical 〈a〉-type and 〈c + a〉-type loops for ten hexagonal crystals, in order to provide a database for future DLPA work on irradiated materials. The use of the dislocation loop specific contrast factors is demonstrated on neutron-irradiated Zr-2.5Nb. A numerical method is presented which allows the calculation of the contrast factors of a broad range of radiation defect types in hexagonal materials. Numerical values of average contrast factor parameters for six dislocation loop types as a function of ellipticity are calculated and tabulated for ten hexagonal materials in order to provide a database for future line profile analysis work.

Original languageEnglish
Pages (from-to)2184-2200
Number of pages17
JournalJournal of Applied Crystallography
Volume49
Issue number6
DOIs
Publication statusPublished - Dec 1 2016

Fingerprint

Irradiation
Databases
Defects
Anisotropy
Neutrons
Hot Temperature
Diffraction
Radiation
Mechanical properties
Crystals
Defect structures
Growth
Dislocations (crystals)
Diffraction patterns
Dosimetry
Plasticity
Numerical methods
Creep
Heat treatment
Microstructure

Keywords

  • dislocation loops
  • line profile analysis
  • neutron diffraction
  • nuclear materials
  • radiation defects

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)

Cite this

Contrast factors of irradiation-induced dislocation loops in hexagonal materials. / Balogh, L.; Long, Fei; Daymond, Mark R.

In: Journal of Applied Crystallography, Vol. 49, No. 6, 01.12.2016, p. 2184-2200.

Research output: Contribution to journalArticle

@article{0444dbee3a334dd29d1ce7e0b1b80d67,
title = "Contrast factors of irradiation-induced dislocation loops in hexagonal materials",
abstract = "Irradiation-induced defects, such as dislocation loops, significantly affect the mechanical properties of structural alloys, altering slip and influencing creep and growth. As a consequence, the quantitative characterization of irradiation-influenced defect structures as a function of dose, thermal treatments and/or cold work is essential for models which predict changes in mechanical properties due to the accumulation of irradiation defects. Whole pattern diffraction line profile analysis (DLPA) is a modern tool for microstructure characterization based on first-principles physical models, well established for dislocation density measurements in plastically deformed materials. However, the DLPA procedures that have been tailored for deformed materials account for the strain anisotropy of hexagonal crystals with theoretical contrast factors calculated specifically for dislocation types generated by plasticity which, if directly applied to irradiated materials, will inherently introduce inaccuracies. In an effort to specifically address dislocation structures consisting of irradiation defects, a method was developed to calculate theoretical contrast factors for any general elliptically shaped dislocation loop. The values of the contrast factors are calculated and compiled in tables for six common elliptical 〈a〉-type and 〈c + a〉-type loops for ten hexagonal crystals, in order to provide a database for future DLPA work on irradiated materials. The use of the dislocation loop specific contrast factors is demonstrated on neutron-irradiated Zr-2.5Nb. A numerical method is presented which allows the calculation of the contrast factors of a broad range of radiation defect types in hexagonal materials. Numerical values of average contrast factor parameters for six dislocation loop types as a function of ellipticity are calculated and tabulated for ten hexagonal materials in order to provide a database for future line profile analysis work.",
keywords = "dislocation loops, line profile analysis, neutron diffraction, nuclear materials, radiation defects",
author = "L. Balogh and Fei Long and Daymond, {Mark R.}",
year = "2016",
month = "12",
day = "1",
doi = "10.1107/S1600576716018136",
language = "English",
volume = "49",
pages = "2184--2200",
journal = "Journal of Applied Crystallography",
issn = "0021-8898",
publisher = "International Union of Crystallography",
number = "6",

}

TY - JOUR

T1 - Contrast factors of irradiation-induced dislocation loops in hexagonal materials

AU - Balogh, L.

AU - Long, Fei

AU - Daymond, Mark R.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Irradiation-induced defects, such as dislocation loops, significantly affect the mechanical properties of structural alloys, altering slip and influencing creep and growth. As a consequence, the quantitative characterization of irradiation-influenced defect structures as a function of dose, thermal treatments and/or cold work is essential for models which predict changes in mechanical properties due to the accumulation of irradiation defects. Whole pattern diffraction line profile analysis (DLPA) is a modern tool for microstructure characterization based on first-principles physical models, well established for dislocation density measurements in plastically deformed materials. However, the DLPA procedures that have been tailored for deformed materials account for the strain anisotropy of hexagonal crystals with theoretical contrast factors calculated specifically for dislocation types generated by plasticity which, if directly applied to irradiated materials, will inherently introduce inaccuracies. In an effort to specifically address dislocation structures consisting of irradiation defects, a method was developed to calculate theoretical contrast factors for any general elliptically shaped dislocation loop. The values of the contrast factors are calculated and compiled in tables for six common elliptical 〈a〉-type and 〈c + a〉-type loops for ten hexagonal crystals, in order to provide a database for future DLPA work on irradiated materials. The use of the dislocation loop specific contrast factors is demonstrated on neutron-irradiated Zr-2.5Nb. A numerical method is presented which allows the calculation of the contrast factors of a broad range of radiation defect types in hexagonal materials. Numerical values of average contrast factor parameters for six dislocation loop types as a function of ellipticity are calculated and tabulated for ten hexagonal materials in order to provide a database for future line profile analysis work.

AB - Irradiation-induced defects, such as dislocation loops, significantly affect the mechanical properties of structural alloys, altering slip and influencing creep and growth. As a consequence, the quantitative characterization of irradiation-influenced defect structures as a function of dose, thermal treatments and/or cold work is essential for models which predict changes in mechanical properties due to the accumulation of irradiation defects. Whole pattern diffraction line profile analysis (DLPA) is a modern tool for microstructure characterization based on first-principles physical models, well established for dislocation density measurements in plastically deformed materials. However, the DLPA procedures that have been tailored for deformed materials account for the strain anisotropy of hexagonal crystals with theoretical contrast factors calculated specifically for dislocation types generated by plasticity which, if directly applied to irradiated materials, will inherently introduce inaccuracies. In an effort to specifically address dislocation structures consisting of irradiation defects, a method was developed to calculate theoretical contrast factors for any general elliptically shaped dislocation loop. The values of the contrast factors are calculated and compiled in tables for six common elliptical 〈a〉-type and 〈c + a〉-type loops for ten hexagonal crystals, in order to provide a database for future DLPA work on irradiated materials. The use of the dislocation loop specific contrast factors is demonstrated on neutron-irradiated Zr-2.5Nb. A numerical method is presented which allows the calculation of the contrast factors of a broad range of radiation defect types in hexagonal materials. Numerical values of average contrast factor parameters for six dislocation loop types as a function of ellipticity are calculated and tabulated for ten hexagonal materials in order to provide a database for future line profile analysis work.

KW - dislocation loops

KW - line profile analysis

KW - neutron diffraction

KW - nuclear materials

KW - radiation defects

UR - http://www.scopus.com/inward/record.url?scp=85003007666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85003007666&partnerID=8YFLogxK

U2 - 10.1107/S1600576716018136

DO - 10.1107/S1600576716018136

M3 - Article

VL - 49

SP - 2184

EP - 2200

JO - Journal of Applied Crystallography

JF - Journal of Applied Crystallography

SN - 0021-8898

IS - 6

ER -