Continuously graded buffers for InGaAs/GaAs structures grown on GaAs

A. Bosacchi, A. C. De Riccardis, P. Frigeri, S. Franchi, C. Ferrari, S. Gennari, L. Lazzarini, L. Nasi, G. Salviati, A. V. Drigo, F. Romanato

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

We report on the preparation under optimized conditions and on the study of InGaAs buffers grown on GaAs, intended for MQW structures for 1.3 and 1.5 μm optical operation at 300 K; the buffers have linear, square-root and parabolic composition profiles. They were designed so that MQWsTgrown atop the buffers are virtually unstrained, unlike those prepared following the conventional approach that are under compressive strain. The results obtained by the concomitant use of TEM, HRXRD, AFM and PL show that, by carefully designing the buffers: (i) the misfit dislocation (MD) profiles and thicknesses of the MD-free regions in the buffers can be predetermined, (ii) active structures atop the buffers are virtually unstrained and have efficient 300 K photoluminescence in the 1.3 and 1.5 μm windows of photonic interest, (iii) the structures have threading dislocation concentrations in the low 106 cm-2 range and show smooth and symmetric cross-hatchings.

Original languageEnglish
Pages (from-to)1009-1015
Number of pages7
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 2
Publication statusPublished - May 1997

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Dislocations (crystals)
Buffers
buffers
Photonics
Photoluminescence
Transmission electron microscopy
Chemical analysis
profiles
gallium arsenide
atomic force microscopy
photonics
photoluminescence
preparation
transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Bosacchi, A., De Riccardis, A. C., Frigeri, P., Franchi, S., Ferrari, C., Gennari, S., ... Romanato, F. (1997). Continuously graded buffers for InGaAs/GaAs structures grown on GaAs. Journal of Crystal Growth, 175-176(PART 2), 1009-1015.

Continuously graded buffers for InGaAs/GaAs structures grown on GaAs. / Bosacchi, A.; De Riccardis, A. C.; Frigeri, P.; Franchi, S.; Ferrari, C.; Gennari, S.; Lazzarini, L.; Nasi, L.; Salviati, G.; Drigo, A. V.; Romanato, F.

In: Journal of Crystal Growth, Vol. 175-176, No. PART 2, 05.1997, p. 1009-1015.

Research output: Contribution to journalArticle

Bosacchi, A, De Riccardis, AC, Frigeri, P, Franchi, S, Ferrari, C, Gennari, S, Lazzarini, L, Nasi, L, Salviati, G, Drigo, AV & Romanato, F 1997, 'Continuously graded buffers for InGaAs/GaAs structures grown on GaAs', Journal of Crystal Growth, vol. 175-176, no. PART 2, pp. 1009-1015.
Bosacchi A, De Riccardis AC, Frigeri P, Franchi S, Ferrari C, Gennari S et al. Continuously graded buffers for InGaAs/GaAs structures grown on GaAs. Journal of Crystal Growth. 1997 May;175-176(PART 2):1009-1015.
Bosacchi, A. ; De Riccardis, A. C. ; Frigeri, P. ; Franchi, S. ; Ferrari, C. ; Gennari, S. ; Lazzarini, L. ; Nasi, L. ; Salviati, G. ; Drigo, A. V. ; Romanato, F. / Continuously graded buffers for InGaAs/GaAs structures grown on GaAs. In: Journal of Crystal Growth. 1997 ; Vol. 175-176, No. PART 2. pp. 1009-1015.
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