Correlation is presented between bulk thermal properties of six different semiconductors and the critical temperatures separating Ion Beam Induced Epitaxial Crystallization (IBIEC) and Amorphization (IBIA). It is suggested that the same critical temperature around a single cascade is responsible for amorphization vs dynamic annealing for medium and high energy implantation. Calculations support the role of thermal processes in the formation of primary (as-implanted) defects. Experimental evidence will be presented, which points to the importance of thermal contacts in implantation end chambers.
ASJC Scopus subject areas
- Nuclear and High Energy Physics