Considerations on effect of local temperature on primary defect production

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Correlation is presented between bulk thermal properties of six different semiconductors and the critical temperatures separating Ion Beam Induced Epitaxial Crystallization (IBIEC) and Amorphization (IBIA). It is suggested that the same critical temperature around a single cascade is responsible for amorphization vs dynamic annealing for medium and high energy implantation. Calculations support the role of thermal processes in the formation of primary (as-implanted) defects. Experimental evidence will be presented, which points to the importance of thermal contacts in implantation end chambers.

Original languageEnglish
Pages (from-to)328-332
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume106
Issue number1-4
DOIs
Publication statusPublished - Dec 2 1995

Fingerprint

Amorphization
implantation
critical temperature
Defects
defects
Ion beams
electric contacts
cascades
Thermodynamic properties
thermodynamic properties
Crystallization
chambers
ion beams
Annealing
crystallization
Semiconductor materials
Temperature
annealing
temperature
Hot Temperature

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

@article{f5a814a3606f441883890eab3102bcef,
title = "Considerations on effect of local temperature on primary defect production",
abstract = "Correlation is presented between bulk thermal properties of six different semiconductors and the critical temperatures separating Ion Beam Induced Epitaxial Crystallization (IBIEC) and Amorphization (IBIA). It is suggested that the same critical temperature around a single cascade is responsible for amorphization vs dynamic annealing for medium and high energy implantation. Calculations support the role of thermal processes in the formation of primary (as-implanted) defects. Experimental evidence will be presented, which points to the importance of thermal contacts in implantation end chambers.",
author = "J. Gyulai and F. P{\'a}szti and E. Szil{\'a}gyi",
year = "1995",
month = "12",
day = "2",
doi = "10.1016/0168-583X(96)80025-5",
language = "English",
volume = "106",
pages = "328--332",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Considerations on effect of local temperature on primary defect production

AU - Gyulai, J.

AU - Pászti, F.

AU - Szilágyi, E.

PY - 1995/12/2

Y1 - 1995/12/2

N2 - Correlation is presented between bulk thermal properties of six different semiconductors and the critical temperatures separating Ion Beam Induced Epitaxial Crystallization (IBIEC) and Amorphization (IBIA). It is suggested that the same critical temperature around a single cascade is responsible for amorphization vs dynamic annealing for medium and high energy implantation. Calculations support the role of thermal processes in the formation of primary (as-implanted) defects. Experimental evidence will be presented, which points to the importance of thermal contacts in implantation end chambers.

AB - Correlation is presented between bulk thermal properties of six different semiconductors and the critical temperatures separating Ion Beam Induced Epitaxial Crystallization (IBIEC) and Amorphization (IBIA). It is suggested that the same critical temperature around a single cascade is responsible for amorphization vs dynamic annealing for medium and high energy implantation. Calculations support the role of thermal processes in the formation of primary (as-implanted) defects. Experimental evidence will be presented, which points to the importance of thermal contacts in implantation end chambers.

UR - http://www.scopus.com/inward/record.url?scp=0343037131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343037131&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(96)80025-5

DO - 10.1016/0168-583X(96)80025-5

M3 - Article

AN - SCOPUS:0343037131

VL - 106

SP - 328

EP - 332

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -