Consequences of high-dose, high temperature Al+ implantation in 6H-SiC

J. Stoemenos, B. Pécz, V. Heera

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

High doses of 350 keV Al+ ions were implanted into 6H-SiC single crystals at 500 °C. The Al atoms occupy preferentially Si sites in the SiC lattice. The replaced Si atoms seem to be mobile under the given implantation conditions and diffuse out. At higher Al concentrations the SiC matrix is decomposed and Si and Al4C3 precipitates are formed. It is found that the Al4C3 precipitates have a perfect epitaxial orientation to the SiC matrix. The phase transformation is accompanied by atomic redistribution and strong volume swelling.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period10/10/9910/15/99

Fingerprint

Precipitates
Atoms
Ion implantation
Swelling
Phase transitions
Single crystals
Ions
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Stoemenos, J., Pécz, B., & Heera, V. (2000). Consequences of high-dose, high temperature Al+ implantation in 6H-SiC. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.

Consequences of high-dose, high temperature Al+ implantation in 6H-SiC. / Stoemenos, J.; Pécz, B.; Heera, V.

Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.

Research output: Chapter in Book/Report/Conference proceedingChapter

Stoemenos, J, Pécz, B & Heera, V 2000, Consequences of high-dose, high temperature Al+ implantation in 6H-SiC. in Materials Science Forum. vol. 338, Trans Tech Publ Ltd, ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, Research Triangle Park, NC, USA, 10/10/99.
Stoemenos J, Pécz B, Heera V. Consequences of high-dose, high temperature Al+ implantation in 6H-SiC. In Materials Science Forum. Vol. 338. Trans Tech Publ Ltd. 2000
Stoemenos, J. ; Pécz, B. ; Heera, V. / Consequences of high-dose, high temperature Al+ implantation in 6H-SiC. Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.
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