Conduction mechanisms in porous Si LEDs

Béla Szentpáli, Tibor Mohácsy, István Bársony

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

Diode-like structures were prepared from p- and n-type Si, in which porous Si layers were sandwiched between the crystalline Si and the evaporated Al top contact. The current-voltage characteristics were investigated in that bias polarity, at which electroluminescence occurs. It was found that the characteristics follow the Fowler-Nordheim tunneling process for both type of devices. The tunneling occurs through the heterojunction barrier at the crystalline-porous interface. The leakage current experienced at low biases in the p-type structure is attributed to trap-assisted tunneling; its saturation character was pointed out by low-frequency noise measurements.

Original languageEnglish
Pages (from-to)174-178
Number of pages5
JournalCurrent Applied Physics
Volume6
Issue number2
DOIs
Publication statusPublished - Feb 1 2006
EventEngineering Aspects of Nanomaterials and Technologies -
Duration: Jan 24 2005Jan 27 2005

Keywords

  • Fowler-Nordheim tunneling
  • Noise
  • Porous silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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