Conduction mechanisms in porous Si LEDs

Béla Szentpáli, Tibor Mohácsy, István Bársony

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Diode-like structures were prepared from p- and n-type Si, in which porous Si layers were sandwiched between the crystalline Si and the evaporated Al top contact. The current-voltage characteristics were investigated in that bias polarity, at which electroluminescence occurs. It was found that the characteristics follow the Fowler-Nordheim tunneling process for both type of devices. The tunneling occurs through the heterojunction barrier at the crystalline-porous interface. The leakage current experienced at low biases in the p-type structure is attributed to trap-assisted tunneling; its saturation character was pointed out by low-frequency noise measurements.

Original languageEnglish
Pages (from-to)174-178
Number of pages5
JournalCurrent Applied Physics
Volume6
Issue number2
DOIs
Publication statusPublished - Feb 2006

Fingerprint

Light emitting diodes
light emitting diodes
Crystalline materials
conduction
Electroluminescence
Current voltage characteristics
Leakage currents
Field emission
Heterojunctions
Diodes
noise measurement
electroluminescence
heterojunctions
polarity
leakage
diodes
traps
low frequencies
saturation
electric potential

Keywords

  • Fowler-Nordheim tunneling
  • Noise
  • Porous silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science (miscellaneous)

Cite this

Conduction mechanisms in porous Si LEDs. / Szentpáli, Béla; Mohácsy, Tibor; Bársony, István.

In: Current Applied Physics, Vol. 6, No. 2, 02.2006, p. 174-178.

Research output: Contribution to journalArticle

Szentpáli, Béla ; Mohácsy, Tibor ; Bársony, István. / Conduction mechanisms in porous Si LEDs. In: Current Applied Physics. 2006 ; Vol. 6, No. 2. pp. 174-178.
@article{ed5ea2e07ffb44ae95fcda7abbbb78d6,
title = "Conduction mechanisms in porous Si LEDs",
abstract = "Diode-like structures were prepared from p- and n-type Si, in which porous Si layers were sandwiched between the crystalline Si and the evaporated Al top contact. The current-voltage characteristics were investigated in that bias polarity, at which electroluminescence occurs. It was found that the characteristics follow the Fowler-Nordheim tunneling process for both type of devices. The tunneling occurs through the heterojunction barrier at the crystalline-porous interface. The leakage current experienced at low biases in the p-type structure is attributed to trap-assisted tunneling; its saturation character was pointed out by low-frequency noise measurements.",
keywords = "Fowler-Nordheim tunneling, Noise, Porous silicon",
author = "B{\'e}la Szentp{\'a}li and Tibor Moh{\'a}csy and Istv{\'a}n B{\'a}rsony",
year = "2006",
month = "2",
doi = "10.1016/j.cap.2005.07.034",
language = "English",
volume = "6",
pages = "174--178",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Conduction mechanisms in porous Si LEDs

AU - Szentpáli, Béla

AU - Mohácsy, Tibor

AU - Bársony, István

PY - 2006/2

Y1 - 2006/2

N2 - Diode-like structures were prepared from p- and n-type Si, in which porous Si layers were sandwiched between the crystalline Si and the evaporated Al top contact. The current-voltage characteristics were investigated in that bias polarity, at which electroluminescence occurs. It was found that the characteristics follow the Fowler-Nordheim tunneling process for both type of devices. The tunneling occurs through the heterojunction barrier at the crystalline-porous interface. The leakage current experienced at low biases in the p-type structure is attributed to trap-assisted tunneling; its saturation character was pointed out by low-frequency noise measurements.

AB - Diode-like structures were prepared from p- and n-type Si, in which porous Si layers were sandwiched between the crystalline Si and the evaporated Al top contact. The current-voltage characteristics were investigated in that bias polarity, at which electroluminescence occurs. It was found that the characteristics follow the Fowler-Nordheim tunneling process for both type of devices. The tunneling occurs through the heterojunction barrier at the crystalline-porous interface. The leakage current experienced at low biases in the p-type structure is attributed to trap-assisted tunneling; its saturation character was pointed out by low-frequency noise measurements.

KW - Fowler-Nordheim tunneling

KW - Noise

KW - Porous silicon

UR - http://www.scopus.com/inward/record.url?scp=27744596507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744596507&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2005.07.034

DO - 10.1016/j.cap.2005.07.034

M3 - Article

VL - 6

SP - 174

EP - 178

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 2

ER -