Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching

M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, E. E. Tatarinov, S. Rodin, M. A. Kaliteevski, V. P. Evtikhiev

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Abstract

In the Si3N4 layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in windows produced with a focused ion beam. It is found that coaxial hexagonal structures are formed during the growth process in ring-shaped mask windows.

Original languageEnglish
Pages (from-to)954-956
Number of pages3
JournalSemiconductors
Volume52
Issue number7
DOIs
Publication statusPublished - Jul 1 2018

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Tatarinov, E. E., Rodin, S., Kaliteevski, M. A., & Evtikhiev, V. P. (2018). Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching. Semiconductors, 52(7), 954-956. https://doi.org/10.1134/S1063782618070151