Concentration dependence of optical absorption in tellurium-doped GaSb

C. Ghezzi, R. Magnanini, A. Parisini, B. Rotelli, L. Tarricone, A. Bosacchi, S. Franchi

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Abstract

The optical absorption of molecular-beam-epitaxy-grown and Te-doped GaSb layers is measured in the spectral region of the fundamental absorption over a temperature range extending from 10 K to 300 K. In accordance with the Burstein-Moss description, a filling of the conduction-band states, resulting in a change of the shape and a shift of the absorption edge to higher energies, is observed in the absorption spectra of Te-doped n-type GaSb layers, with electron density ranging from 1.1 × 1016 to 7.6 × 1017 cm-3 at room temperature. A quantitative description of the Burstein-Moss effect is performed and the Fermi-level energy and the electron density in the Γ valley are obtained as a function of the temperature in two different ways: (i) by comparing absorption spectra of heavily doped and unintentionally or lightly doped GaSb samples; (ii) through a direct fit of absorption data performed in the framework of Kane's band model. The values of the Fermi level and of electron density in the Γ valley which have been optically obtained resulted in satisfactory agreement with those obtained from electrical measurements. The bandgap narrowing and the perturbation of the conduction-band density of states due to heavy doping in small-effective-mass semiconductors, such as GaSb, is considered in the framework of some current theoretical models.

Original languageEnglish
Pages (from-to)858-866
Number of pages9
JournalSemiconductor Science and Technology
Volume12
Issue number7
DOIs
Publication statusPublished - Jul 1 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Ghezzi, C., Magnanini, R., Parisini, A., Rotelli, B., Tarricone, L., Bosacchi, A., & Franchi, S. (1997). Concentration dependence of optical absorption in tellurium-doped GaSb. Semiconductor Science and Technology, 12(7), 858-866. https://doi.org/10.1088/0268-1242/12/7/016