COMPUTER SIMULATION OF THE POST-NUCLEATION GROWTH OF THIN AMORPHOUS GERMANIUM FILMS.

A. Barna, P. Barna, G. Radnóczi, H. Sugawara, P. Thomas

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

The very early stage of amorphous Ge film formation by vapor deposition is simulated. A simplified model is considered. In a post-nucleation stage particles are formed by an atom by atom building up process. Re-evaporation of adatoms and migration along the edge of already formed particles is taken into account. An upper limit is obtained for the maximum edge migration distance for which still irregular growth of particles is possible. From the result it is concluded, that during the formation of thin evaporated amorphous Ge films, showing a supernetwork with irregular shaped particles of high density, self surface migration may be neglected.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherCent for Ind Consult and Liaison
Pages19-23
Number of pages5
Publication statusPublished - 1977
EventAmorphous and Liq Semicond, Proc of the Int Conf, 7th - Edinburgh, Engl
Duration: Jun 27 1977Jul 1 1977

Other

OtherAmorphous and Liq Semicond, Proc of the Int Conf, 7th
CityEdinburgh, Engl
Period6/27/777/1/77

Fingerprint

Germanium
Nucleation
Atoms
Vapor deposition
Adatoms
Computer simulation
Evaporation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Barna, A., Barna, P., Radnóczi, G., Sugawara, H., & Thomas, P. (1977). COMPUTER SIMULATION OF THE POST-NUCLEATION GROWTH OF THIN AMORPHOUS GERMANIUM FILMS. In Unknown Host Publication Title (pp. 19-23). Cent for Ind Consult and Liaison.

COMPUTER SIMULATION OF THE POST-NUCLEATION GROWTH OF THIN AMORPHOUS GERMANIUM FILMS. / Barna, A.; Barna, P.; Radnóczi, G.; Sugawara, H.; Thomas, P.

Unknown Host Publication Title. Cent for Ind Consult and Liaison, 1977. p. 19-23.

Research output: Chapter in Book/Report/Conference proceedingChapter

Barna, A, Barna, P, Radnóczi, G, Sugawara, H & Thomas, P 1977, COMPUTER SIMULATION OF THE POST-NUCLEATION GROWTH OF THIN AMORPHOUS GERMANIUM FILMS. in Unknown Host Publication Title. Cent for Ind Consult and Liaison, pp. 19-23, Amorphous and Liq Semicond, Proc of the Int Conf, 7th, Edinburgh, Engl, 6/27/77.
Barna A, Barna P, Radnóczi G, Sugawara H, Thomas P. COMPUTER SIMULATION OF THE POST-NUCLEATION GROWTH OF THIN AMORPHOUS GERMANIUM FILMS. In Unknown Host Publication Title. Cent for Ind Consult and Liaison. 1977. p. 19-23
Barna, A. ; Barna, P. ; Radnóczi, G. ; Sugawara, H. ; Thomas, P. / COMPUTER SIMULATION OF THE POST-NUCLEATION GROWTH OF THIN AMORPHOUS GERMANIUM FILMS. Unknown Host Publication Title. Cent for Ind Consult and Liaison, 1977. pp. 19-23
@inbook{30353e67aa1845bb8e445d118c63cd10,
title = "COMPUTER SIMULATION OF THE POST-NUCLEATION GROWTH OF THIN AMORPHOUS GERMANIUM FILMS.",
abstract = "The very early stage of amorphous Ge film formation by vapor deposition is simulated. A simplified model is considered. In a post-nucleation stage particles are formed by an atom by atom building up process. Re-evaporation of adatoms and migration along the edge of already formed particles is taken into account. An upper limit is obtained for the maximum edge migration distance for which still irregular growth of particles is possible. From the result it is concluded, that during the formation of thin evaporated amorphous Ge films, showing a supernetwork with irregular shaped particles of high density, self surface migration may be neglected.",
author = "A. Barna and P. Barna and G. Radn{\'o}czi and H. Sugawara and P. Thomas",
year = "1977",
language = "English",
pages = "19--23",
booktitle = "Unknown Host Publication Title",
publisher = "Cent for Ind Consult and Liaison",

}

TY - CHAP

T1 - COMPUTER SIMULATION OF THE POST-NUCLEATION GROWTH OF THIN AMORPHOUS GERMANIUM FILMS.

AU - Barna, A.

AU - Barna, P.

AU - Radnóczi, G.

AU - Sugawara, H.

AU - Thomas, P.

PY - 1977

Y1 - 1977

N2 - The very early stage of amorphous Ge film formation by vapor deposition is simulated. A simplified model is considered. In a post-nucleation stage particles are formed by an atom by atom building up process. Re-evaporation of adatoms and migration along the edge of already formed particles is taken into account. An upper limit is obtained for the maximum edge migration distance for which still irregular growth of particles is possible. From the result it is concluded, that during the formation of thin evaporated amorphous Ge films, showing a supernetwork with irregular shaped particles of high density, self surface migration may be neglected.

AB - The very early stage of amorphous Ge film formation by vapor deposition is simulated. A simplified model is considered. In a post-nucleation stage particles are formed by an atom by atom building up process. Re-evaporation of adatoms and migration along the edge of already formed particles is taken into account. An upper limit is obtained for the maximum edge migration distance for which still irregular growth of particles is possible. From the result it is concluded, that during the formation of thin evaporated amorphous Ge films, showing a supernetwork with irregular shaped particles of high density, self surface migration may be neglected.

UR - http://www.scopus.com/inward/record.url?scp=0017701950&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017701950&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0017701950

SP - 19

EP - 23

BT - Unknown Host Publication Title

PB - Cent for Ind Consult and Liaison

ER -