Computer simulation of channeling in Si and GaAs crystals

F. Ditrói, J. D. Meyer, R. W. Michelmann, K. Bethge

Research output: Contribution to journalArticle

7 Citations (Scopus)


A theoretical model and a Monte Carlo based algorithm were developed to calculate the stopping power of energetic ions in crystals and the energy loss and range of the ions in different low-index and random directions. For model calculations zinc-blende crystals were chosen (Si) because of the availability of the target material in good form for experimental purposes. The crystals were experimentally investigated and the simulations were performed in the main crystal directions and also in a random direction. The calculated stopping powers and energy loss spectra were compared with our experimental results and with those from the literature.

Original languageEnglish
Pages (from-to)182-186
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Issue number1-4
Publication statusPublished - May 5 1995

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Fingerprint Dive into the research topics of 'Computer simulation of channeling in Si and GaAs crystals'. Together they form a unique fingerprint.

  • Cite this