Composition of the "gaAs" quantum dot, grown by droplet epitaxy

Á Nemcsics, L. Tth, L. Dobos, Ch Heyn, A. Stemmann, A. Schramm, H. Welsch, W. Hansen

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Abstract

Self-assembled strain-free quantum dot (QD) structures were grown on AlGaAs surface by the droplet epitaxal method. The QDs were developed from pure Ga droplets under As pressure. The QDs were investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Both techniques show that the QDs are very uniform in size and their distribution on the surface is also homogeneous. The high resolution cross-sectional TEM investigation shows perfect lattice matching between the QD and the substrate, and also the faceting of the side walls of QD can be identified exactly by lattice planes. Analytical TEM (elemental mapping by EELS) unambiguously identifies the presence of Al in the QD.

Original languageEnglish
Pages (from-to)351-357
Number of pages7
JournalSuperlattices and Microstructures
Volume48
Issue number4
DOIs
Publication statusPublished - Oct 1 2010

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Keywords

  • Composition map
  • Droplet epitaxy
  • GaAs
  • MBE
  • Quantum dot (QD)
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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