Composition control of GaSbAs alloys

A. Bosacchi, S. Franchi, P. Allegri, V. Avanzini, A. Baraldi, R. Magnanini, M. Berti, D. De Salvador, S. K. Sinha

Research output: Contribution to journalConference article

21 Citations (Scopus)

Abstract

We report on a detailed study on the dependence of GaSbxAs1-x alloy composition (x<0.5) on the fluxes of the individual constituents Ga, Sb and As. The values of fluxes are obtained by the analysis of RHEED oscillations under Ga-, As- and Sb-limited growth conditions, while the alloy composition has been derived by the combined use of photoluminescence and Rutherford backscattering spectrometry measurements. It is shown that the Sb mole fraction: (i) increases with increasing Ga flux when the other parameters are kept constant, (ii) increases with increasing Sb flux and, (iii) for given Ga and Sb fluxes, is basically independent of the As flux for relatively high As fluxes, while it increases as the As fluxes are reduced. The present results allow an improved control of composition of the GaSbAs alloys that are considered of increasing interest for optoelectronic applications.

Original languageEnglish
Pages (from-to)858-860
Number of pages3
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - May 1999
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: Aug 31 1998Sep 4 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Bosacchi, A., Franchi, S., Allegri, P., Avanzini, V., Baraldi, A., Magnanini, R., Berti, M., De Salvador, D., & Sinha, S. K. (1999). Composition control of GaSbAs alloys. Journal of Crystal Growth, 201, 858-860. https://doi.org/10.1016/S0022-0248(98)01473-0