Composition and chemical structure characteristics of CNx layers prepared by different plasma assisted techniques

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Abstract

CNx layers were grown on Si (100) wafers and cleaved NaCl (100) slices by reactive sputtering of graphite in DC nitrogen plasma, by DC and RF magnetron sputtering of graphite in N2 or N2 + Ar mixture, and from C-containing precursors in nitrogen by plasma-enhanced chemical vapour deposition (PECVD). The chemical structure of the deposited layers was characterised by XPS and FT-IR spectroscopy. DC plasma deposition resulted in layers with high N content, close to CN stoichiometry (x ≈ 1), as determined by XPS. The CNx layers deposited by DC or RF magnetron sputtering contained 22-32 at.% N (x ≈ 0.3-0.5). For layers prepared by PECVD, N-content varying between 20 and 50 at.% was characteristic. The broad and asymmetric C1s and N1s XPS spectral lines manifested several chemical bonding states of the constituents. The proportions of the line components varied with the preparation conditions. Significant differences were also observed in the 1100-1700 cm-1 region of the FT-IR spectra. Assignment of the two major N1s photoelectron peak-components was proposed based on the established correlation between the FT-IR results, composition and binding energy values measured for magnetron-deposited CNx phases as follows: the N1 at 398.3 eV BE to N = C double bonds and N2 at 400.2 eV BE to N-C single bonds.

Original languageEnglish
Pages (from-to)63-69
Number of pages7
JournalSolid State Ionics
Volume141-142
DOIs
Publication statusPublished - May 1 2001

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Graphite
X ray photoelectron spectroscopy
Plasma enhanced chemical vapor deposition
Plasmas
Magnetron sputtering
direct current
Chemical analysis
Nitrogen plasma
Plasma deposition
Reactive sputtering
Photoelectrons
Binding energy
magnetron sputtering
Stoichiometry
graphite
vapor deposition
Infrared spectroscopy
Nitrogen
nitrogen plasma
line spectra

Keywords

  • Carbon nitride
  • CN
  • IR
  • Magnetron sputtering
  • PECVD
  • XPS

ASJC Scopus subject areas

  • Electrochemistry
  • Physical and Theoretical Chemistry
  • Energy Engineering and Power Technology
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

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title = "Composition and chemical structure characteristics of CNx layers prepared by different plasma assisted techniques",
abstract = "CNx layers were grown on Si (100) wafers and cleaved NaCl (100) slices by reactive sputtering of graphite in DC nitrogen plasma, by DC and RF magnetron sputtering of graphite in N2 or N2 + Ar mixture, and from C-containing precursors in nitrogen by plasma-enhanced chemical vapour deposition (PECVD). The chemical structure of the deposited layers was characterised by XPS and FT-IR spectroscopy. DC plasma deposition resulted in layers with high N content, close to CN stoichiometry (x ≈ 1), as determined by XPS. The CNx layers deposited by DC or RF magnetron sputtering contained 22-32 at.{\%} N (x ≈ 0.3-0.5). For layers prepared by PECVD, N-content varying between 20 and 50 at.{\%} was characteristic. The broad and asymmetric C1s and N1s XPS spectral lines manifested several chemical bonding states of the constituents. The proportions of the line components varied with the preparation conditions. Significant differences were also observed in the 1100-1700 cm-1 region of the FT-IR spectra. Assignment of the two major N1s photoelectron peak-components was proposed based on the established correlation between the FT-IR results, composition and binding energy values measured for magnetron-deposited CNx phases as follows: the N1 at 398.3 eV BE to N = C double bonds and N2 at 400.2 eV BE to N-C single bonds.",
keywords = "Carbon nitride, CN, IR, Magnetron sputtering, PECVD, XPS",
author = "T. Ujv{\'a}ri and A. T{\'o}th and M. Mohai and J. Sz{\'e}pv{\"o}lgyi and I. Bert{\'o}ti",
year = "2001",
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doi = "10.1016/S0167-2738(01)00722-6",
language = "English",
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T1 - Composition and chemical structure characteristics of CNx layers prepared by different plasma assisted techniques

AU - Ujvári, T.

AU - Tóth, A.

AU - Mohai, M.

AU - Szépvölgyi, J.

AU - Bertóti, I.

PY - 2001/5/1

Y1 - 2001/5/1

N2 - CNx layers were grown on Si (100) wafers and cleaved NaCl (100) slices by reactive sputtering of graphite in DC nitrogen plasma, by DC and RF magnetron sputtering of graphite in N2 or N2 + Ar mixture, and from C-containing precursors in nitrogen by plasma-enhanced chemical vapour deposition (PECVD). The chemical structure of the deposited layers was characterised by XPS and FT-IR spectroscopy. DC plasma deposition resulted in layers with high N content, close to CN stoichiometry (x ≈ 1), as determined by XPS. The CNx layers deposited by DC or RF magnetron sputtering contained 22-32 at.% N (x ≈ 0.3-0.5). For layers prepared by PECVD, N-content varying between 20 and 50 at.% was characteristic. The broad and asymmetric C1s and N1s XPS spectral lines manifested several chemical bonding states of the constituents. The proportions of the line components varied with the preparation conditions. Significant differences were also observed in the 1100-1700 cm-1 region of the FT-IR spectra. Assignment of the two major N1s photoelectron peak-components was proposed based on the established correlation between the FT-IR results, composition and binding energy values measured for magnetron-deposited CNx phases as follows: the N1 at 398.3 eV BE to N = C double bonds and N2 at 400.2 eV BE to N-C single bonds.

AB - CNx layers were grown on Si (100) wafers and cleaved NaCl (100) slices by reactive sputtering of graphite in DC nitrogen plasma, by DC and RF magnetron sputtering of graphite in N2 or N2 + Ar mixture, and from C-containing precursors in nitrogen by plasma-enhanced chemical vapour deposition (PECVD). The chemical structure of the deposited layers was characterised by XPS and FT-IR spectroscopy. DC plasma deposition resulted in layers with high N content, close to CN stoichiometry (x ≈ 1), as determined by XPS. The CNx layers deposited by DC or RF magnetron sputtering contained 22-32 at.% N (x ≈ 0.3-0.5). For layers prepared by PECVD, N-content varying between 20 and 50 at.% was characteristic. The broad and asymmetric C1s and N1s XPS spectral lines manifested several chemical bonding states of the constituents. The proportions of the line components varied with the preparation conditions. Significant differences were also observed in the 1100-1700 cm-1 region of the FT-IR spectra. Assignment of the two major N1s photoelectron peak-components was proposed based on the established correlation between the FT-IR results, composition and binding energy values measured for magnetron-deposited CNx phases as follows: the N1 at 398.3 eV BE to N = C double bonds and N2 at 400.2 eV BE to N-C single bonds.

KW - Carbon nitride

KW - CN

KW - IR

KW - Magnetron sputtering

KW - PECVD

KW - XPS

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