Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry

T. Lohner, Z. Zolnai, P. Petrik, G. Battistig, J. Garcia López, Y. Morilla, A. Koós, Z. Osváth, M. Fried

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Abstract

Measuring with a spectroscopic ellipsometer we determined the complex dielectric function of completely amorphous silicon carbide prepared by ion implantation. 860 keV Ni+ ions were implanted into single crystalline 4H-SiC to produce thick amorphized layer. Ion beam analysis was applied to assess total amorphization. For this purpose 4He+ ion beam of 3.5 MeV was selected taking the advantage that the scattering cross section of carbon at this energy at 165° detection angle is about six times larger than the Rutherford type. Atomic force microscopy was performed to characterize the roughness of the ion-implanted surfaces. Multiple energy Ar+ implantation was used to produce homogeneous amorphous layer. The Tauc-Lorentz model was applied for the evaluation of the ellipsometric results. The implantation-induced swelling was obtained through the measurement of the step height across the masked and implanted areas. Comparison was made among the complex dielectric functions of amorphized SiC studied by us and by different research groups. It is found that the complex dielectric functions of amorphized SiC differ considerably if different ion implantation conditions were applied.

Original languageEnglish
Pages (from-to)1374-1377
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number5
DOIs
Publication statusPublished - 2008

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ellipsometry
ion implantation
implantation
ion beams
ellipsometers
silicon carbides
swelling
scattering cross sections
amorphous silicon
ions
roughness
atomic force microscopy
energy
evaluation
carbon

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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title = "Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry",
abstract = "Measuring with a spectroscopic ellipsometer we determined the complex dielectric function of completely amorphous silicon carbide prepared by ion implantation. 860 keV Ni+ ions were implanted into single crystalline 4H-SiC to produce thick amorphized layer. Ion beam analysis was applied to assess total amorphization. For this purpose 4He+ ion beam of 3.5 MeV was selected taking the advantage that the scattering cross section of carbon at this energy at 165° detection angle is about six times larger than the Rutherford type. Atomic force microscopy was performed to characterize the roughness of the ion-implanted surfaces. Multiple energy Ar+ implantation was used to produce homogeneous amorphous layer. The Tauc-Lorentz model was applied for the evaluation of the ellipsometric results. The implantation-induced swelling was obtained through the measurement of the step height across the masked and implanted areas. Comparison was made among the complex dielectric functions of amorphized SiC studied by us and by different research groups. It is found that the complex dielectric functions of amorphized SiC differ considerably if different ion implantation conditions were applied.",
author = "T. Lohner and Z. Zolnai and P. Petrik and G. Battistig and {Garcia L{\'o}pez}, J. and Y. Morilla and A. Ko{\'o}s and Z. Osv{\'a}th and M. Fried",
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T1 - Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry

AU - Lohner, T.

AU - Zolnai, Z.

AU - Petrik, P.

AU - Battistig, G.

AU - Garcia López, J.

AU - Morilla, Y.

AU - Koós, A.

AU - Osváth, Z.

AU - Fried, M.

PY - 2008

Y1 - 2008

N2 - Measuring with a spectroscopic ellipsometer we determined the complex dielectric function of completely amorphous silicon carbide prepared by ion implantation. 860 keV Ni+ ions were implanted into single crystalline 4H-SiC to produce thick amorphized layer. Ion beam analysis was applied to assess total amorphization. For this purpose 4He+ ion beam of 3.5 MeV was selected taking the advantage that the scattering cross section of carbon at this energy at 165° detection angle is about six times larger than the Rutherford type. Atomic force microscopy was performed to characterize the roughness of the ion-implanted surfaces. Multiple energy Ar+ implantation was used to produce homogeneous amorphous layer. The Tauc-Lorentz model was applied for the evaluation of the ellipsometric results. The implantation-induced swelling was obtained through the measurement of the step height across the masked and implanted areas. Comparison was made among the complex dielectric functions of amorphized SiC studied by us and by different research groups. It is found that the complex dielectric functions of amorphized SiC differ considerably if different ion implantation conditions were applied.

AB - Measuring with a spectroscopic ellipsometer we determined the complex dielectric function of completely amorphous silicon carbide prepared by ion implantation. 860 keV Ni+ ions were implanted into single crystalline 4H-SiC to produce thick amorphized layer. Ion beam analysis was applied to assess total amorphization. For this purpose 4He+ ion beam of 3.5 MeV was selected taking the advantage that the scattering cross section of carbon at this energy at 165° detection angle is about six times larger than the Rutherford type. Atomic force microscopy was performed to characterize the roughness of the ion-implanted surfaces. Multiple energy Ar+ implantation was used to produce homogeneous amorphous layer. The Tauc-Lorentz model was applied for the evaluation of the ellipsometric results. The implantation-induced swelling was obtained through the measurement of the step height across the masked and implanted areas. Comparison was made among the complex dielectric functions of amorphized SiC studied by us and by different research groups. It is found that the complex dielectric functions of amorphized SiC differ considerably if different ion implantation conditions were applied.

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