Complementary metrology within a European joint laboratory

A. Nutsch, B. Beckhoff, R. Altmann, J. A. Van Den Berg, D. Giubertoni, P. Hoenicke, M. Bersani, A. Leibold, F. Meirer, M. Mueller, G. Pepponi, M. Otto, P. Petrik, M. Reading, L. Pfitzner, H. Ryssel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

The continuous dimensional reduction drives the development of metrology, analysis and characterization for nano and micro electronics. An enormous worldwide R&D effort focuses on the understanding and controlling materials properties and dimensions at atomic level. Crucial for groundbreaking new developments is the availability of appropriate analytical infrastructures providing techniques with information depths well adapted to the nanoscaled objects of interest. This requires widely accessible, independent complementary metrology, analytical techniques, and characterization. For example new materials and the demand of improved detection sensitivities for contaminants provide huge challenges for the capabilities of current analysis equipment and expertise. At the same time, the availability of complementary competences is crucial for advancement of analytical methodologies through cross-comparison, round-robin, and benchmarking of results. This paper describes the formation of an independent analytical infrastructure within Europe having the expertise and competence to solve metrology problems for development of nanotechnologies. Furthermore, a strategy is shown to establish independently operating 'Golden Laboratories'(tm) for complementary and reliable metrology, analysis, and characterization adapted to the requirements of industrial partners.

Original languageEnglish
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages97-100
Number of pages4
Volume145-146
ISBN (Print)3908451647, 9783908451648
DOIs
Publication statusPublished - 2009
Event9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008 - Bruges, Belgium
Duration: Sep 22 2008Sep 24 2008

Publication series

NameSolid State Phenomena
Volume145-146
ISSN (Print)10120394

Other

Other9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008
CountryBelgium
CityBruges
Period9/22/089/24/08

Fingerprint

metrology
availability
Availability
Nanoelectronics
Benchmarking
nanotechnology
Nanotechnology
microelectronics
Microelectronics
contaminants
Materials properties
methodology
Impurities
requirements
electronics

Keywords

  • Research infrastructures
  • Thin layers
  • Ultra shallow junctions
  • Ultra trace analysis

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Nutsch, A., Beckhoff, B., Altmann, R., Van Den Berg, J. A., Giubertoni, D., Hoenicke, P., ... Ryssel, H. (2009). Complementary metrology within a European joint laboratory. In Solid State Phenomena (Vol. 145-146, pp. 97-100). (Solid State Phenomena; Vol. 145-146). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.145-146.97

Complementary metrology within a European joint laboratory. / Nutsch, A.; Beckhoff, B.; Altmann, R.; Van Den Berg, J. A.; Giubertoni, D.; Hoenicke, P.; Bersani, M.; Leibold, A.; Meirer, F.; Mueller, M.; Pepponi, G.; Otto, M.; Petrik, P.; Reading, M.; Pfitzner, L.; Ryssel, H.

Solid State Phenomena. Vol. 145-146 Trans Tech Publications Ltd, 2009. p. 97-100 (Solid State Phenomena; Vol. 145-146).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nutsch, A, Beckhoff, B, Altmann, R, Van Den Berg, JA, Giubertoni, D, Hoenicke, P, Bersani, M, Leibold, A, Meirer, F, Mueller, M, Pepponi, G, Otto, M, Petrik, P, Reading, M, Pfitzner, L & Ryssel, H 2009, Complementary metrology within a European joint laboratory. in Solid State Phenomena. vol. 145-146, Solid State Phenomena, vol. 145-146, Trans Tech Publications Ltd, pp. 97-100, 9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008, Bruges, Belgium, 9/22/08. https://doi.org/10.4028/www.scientific.net/SSP.145-146.97
Nutsch A, Beckhoff B, Altmann R, Van Den Berg JA, Giubertoni D, Hoenicke P et al. Complementary metrology within a European joint laboratory. In Solid State Phenomena. Vol. 145-146. Trans Tech Publications Ltd. 2009. p. 97-100. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.145-146.97
Nutsch, A. ; Beckhoff, B. ; Altmann, R. ; Van Den Berg, J. A. ; Giubertoni, D. ; Hoenicke, P. ; Bersani, M. ; Leibold, A. ; Meirer, F. ; Mueller, M. ; Pepponi, G. ; Otto, M. ; Petrik, P. ; Reading, M. ; Pfitzner, L. ; Ryssel, H. / Complementary metrology within a European joint laboratory. Solid State Phenomena. Vol. 145-146 Trans Tech Publications Ltd, 2009. pp. 97-100 (Solid State Phenomena).
@inproceedings{a36a0ea7e16a4b3c8404d3382bb3a452,
title = "Complementary metrology within a European joint laboratory",
abstract = "The continuous dimensional reduction drives the development of metrology, analysis and characterization for nano and micro electronics. An enormous worldwide R&D effort focuses on the understanding and controlling materials properties and dimensions at atomic level. Crucial for groundbreaking new developments is the availability of appropriate analytical infrastructures providing techniques with information depths well adapted to the nanoscaled objects of interest. This requires widely accessible, independent complementary metrology, analytical techniques, and characterization. For example new materials and the demand of improved detection sensitivities for contaminants provide huge challenges for the capabilities of current analysis equipment and expertise. At the same time, the availability of complementary competences is crucial for advancement of analytical methodologies through cross-comparison, round-robin, and benchmarking of results. This paper describes the formation of an independent analytical infrastructure within Europe having the expertise and competence to solve metrology problems for development of nanotechnologies. Furthermore, a strategy is shown to establish independently operating 'Golden Laboratories'(tm) for complementary and reliable metrology, analysis, and characterization adapted to the requirements of industrial partners.",
keywords = "Research infrastructures, Thin layers, Ultra shallow junctions, Ultra trace analysis",
author = "A. Nutsch and B. Beckhoff and R. Altmann and {Van Den Berg}, {J. A.} and D. Giubertoni and P. Hoenicke and M. Bersani and A. Leibold and F. Meirer and M. Mueller and G. Pepponi and M. Otto and P. Petrik and M. Reading and L. Pfitzner and H. Ryssel",
year = "2009",
doi = "10.4028/www.scientific.net/SSP.145-146.97",
language = "English",
isbn = "3908451647",
volume = "145-146",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "97--100",
booktitle = "Solid State Phenomena",

}

TY - GEN

T1 - Complementary metrology within a European joint laboratory

AU - Nutsch, A.

AU - Beckhoff, B.

AU - Altmann, R.

AU - Van Den Berg, J. A.

AU - Giubertoni, D.

AU - Hoenicke, P.

AU - Bersani, M.

AU - Leibold, A.

AU - Meirer, F.

AU - Mueller, M.

AU - Pepponi, G.

AU - Otto, M.

AU - Petrik, P.

AU - Reading, M.

AU - Pfitzner, L.

AU - Ryssel, H.

PY - 2009

Y1 - 2009

N2 - The continuous dimensional reduction drives the development of metrology, analysis and characterization for nano and micro electronics. An enormous worldwide R&D effort focuses on the understanding and controlling materials properties and dimensions at atomic level. Crucial for groundbreaking new developments is the availability of appropriate analytical infrastructures providing techniques with information depths well adapted to the nanoscaled objects of interest. This requires widely accessible, independent complementary metrology, analytical techniques, and characterization. For example new materials and the demand of improved detection sensitivities for contaminants provide huge challenges for the capabilities of current analysis equipment and expertise. At the same time, the availability of complementary competences is crucial for advancement of analytical methodologies through cross-comparison, round-robin, and benchmarking of results. This paper describes the formation of an independent analytical infrastructure within Europe having the expertise and competence to solve metrology problems for development of nanotechnologies. Furthermore, a strategy is shown to establish independently operating 'Golden Laboratories'(tm) for complementary and reliable metrology, analysis, and characterization adapted to the requirements of industrial partners.

AB - The continuous dimensional reduction drives the development of metrology, analysis and characterization for nano and micro electronics. An enormous worldwide R&D effort focuses on the understanding and controlling materials properties and dimensions at atomic level. Crucial for groundbreaking new developments is the availability of appropriate analytical infrastructures providing techniques with information depths well adapted to the nanoscaled objects of interest. This requires widely accessible, independent complementary metrology, analytical techniques, and characterization. For example new materials and the demand of improved detection sensitivities for contaminants provide huge challenges for the capabilities of current analysis equipment and expertise. At the same time, the availability of complementary competences is crucial for advancement of analytical methodologies through cross-comparison, round-robin, and benchmarking of results. This paper describes the formation of an independent analytical infrastructure within Europe having the expertise and competence to solve metrology problems for development of nanotechnologies. Furthermore, a strategy is shown to establish independently operating 'Golden Laboratories'(tm) for complementary and reliable metrology, analysis, and characterization adapted to the requirements of industrial partners.

KW - Research infrastructures

KW - Thin layers

KW - Ultra shallow junctions

KW - Ultra trace analysis

UR - http://www.scopus.com/inward/record.url?scp=67849087027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67849087027&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.145-146.97

DO - 10.4028/www.scientific.net/SSP.145-146.97

M3 - Conference contribution

AN - SCOPUS:67849087027

SN - 3908451647

SN - 9783908451648

VL - 145-146

T3 - Solid State Phenomena

SP - 97

EP - 100

BT - Solid State Phenomena

PB - Trans Tech Publications Ltd

ER -