Comparison of vacancy creation by nuclear and electronic processes in silicon irradiated with swift Kr and Bi ions

P. M. Gordo, L. Liszkay, K. Havancsák, V. A. Skuratov, P. Sperr, W. Egger, C. Lopes Gil, A. P. De Lima, Zs Kajcsos

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon samples, irradiated with swift Kr (245 MeV) and Bi (710 MeV) ions at room temperature, were investigated using a continuous and a pulsed positron beam and conventional Doppler broadening and lifetime spectroscopy. In the fluence and depth ranges studied, creation of large voids and amorphization was not observed. The dominant defects were found to be divacancies, present from the near surface region all along the ion tracks. We found that the formation of divacancies from ion-induced vacancies as predicted by Monte-Carlo-calculations is higher in the case of the heavier Bi ion.

Original languageEnglish
Title of host publicationPositron Annihilation
Subtitle of host publicationProceedings of the 13th International Conference on Positron Annihilation, ICPA-13
EditorsToshio Hyodo, Haruo Saito, Yoshinori Kobayashi, Yasuyuki Nagashima
PublisherTrans Tech Publications Ltd
Pages93-95
Number of pages3
ISBN (Print)9780878499366
DOIs
Publication statusPublished - Jan 1 2004
EventPositron Annihilation: Proceedings of the 13th International Conference on Positron Annihilation, ICPA-13 - Kyoto, Japan
Duration: Sep 7 2003Sep 12 2003

Publication series

NameMaterials Science Forum
Volume445-446
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferencePositron Annihilation: Proceedings of the 13th International Conference on Positron Annihilation, ICPA-13
CountryJapan
CityKyoto
Period9/7/039/12/03

Keywords

  • Defects
  • Irradiation
  • Positron Lifetime
  • Pulsed Positron Beam
  • S-Parameter
  • Silicon
  • Swift Ions
  • W-Parameter

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Gordo, P. M., Liszkay, L., Havancsák, K., Skuratov, V. A., Sperr, P., Egger, W., Gil, C. L., De Lima, A. P., & Kajcsos, Z. (2004). Comparison of vacancy creation by nuclear and electronic processes in silicon irradiated with swift Kr and Bi ions. In T. Hyodo, H. Saito, Y. Kobayashi, & Y. Nagashima (Eds.), Positron Annihilation: Proceedings of the 13th International Conference on Positron Annihilation, ICPA-13 (pp. 93-95). (Materials Science Forum; Vol. 445-446). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/msf.445-446.93