Comparison of the water effect on the resistance of different semiconducting metal oxides

F. Réti, M. Fleischer, J. Gerblinger, U. Lampe, E. B. Várhegyi, I. V. Perczel, H. Meixner, J. Giber

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16 Citations (Scopus)

Abstract

In this work the time and temperature dependence of the complex interaction between water and the different oxide semiconductor surface was examined by resistance measurements in inert and in oxygen containing atmospheres. The experimental temperature varied between 823 and 1093 K. The content of the atmospheric pressure nitrogen or 5% oxygen containing nitrogen carrier was 15 or 30 mbar.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
Journal"Sensors and Actuators, B: Chemical"
Volume26
Issue number1-3
DOIs
Publication statusPublished - Jan 1 1995

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Keywords

  • Metal oxides
  • Resistance
  • Water effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Réti, F., Fleischer, M., Gerblinger, J., Lampe, U., Várhegyi, E. B., Perczel, I. V., Meixner, H., & Giber, J. (1995). Comparison of the water effect on the resistance of different semiconducting metal oxides. "Sensors and Actuators, B: Chemical", 26(1-3), 103-107. https://doi.org/10.1016/0925-4005(94)01567-2