Comparison of the water effect on the resistance of different semiconducting metal oxides

F. Réti, M. Fleischer, J. Gerblinger, U. Lampe, E. B. Várhegyi, I. V. Perczel, H. Meixner, J. Giber

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In this work the time and temperature dependence of the complex interaction between water and the different oxide semiconductor surface was examined by resistance measurements in inert and in oxygen containing atmospheres. The experimental temperature varied between 823 and 1093 K. The content of the atmospheric pressure nitrogen or 5% oxygen containing nitrogen carrier was 15 or 30 mbar.

Original languageEnglish
Pages (from-to)103-107
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume26
Issue number1-3
Publication statusPublished - 1995

Fingerprint

Oxides
metal oxides
Nitrogen
Metals
Oxygen
nitrogen
Water
Beam plasma interactions
oxygen
water
Atmospheric pressure
time dependence
atmospheric pressure
atmospheres
Temperature
temperature dependence
oxides
interactions
temperature
Oxide semiconductors

Keywords

  • Metal oxides
  • Resistance
  • Water effect

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Analytical Chemistry
  • Electrochemistry

Cite this

Réti, F., Fleischer, M., Gerblinger, J., Lampe, U., Várhegyi, E. B., Perczel, I. V., ... Giber, J. (1995). Comparison of the water effect on the resistance of different semiconducting metal oxides. Sensors and Actuators, B: Chemical, 26(1-3), 103-107.

Comparison of the water effect on the resistance of different semiconducting metal oxides. / Réti, F.; Fleischer, M.; Gerblinger, J.; Lampe, U.; Várhegyi, E. B.; Perczel, I. V.; Meixner, H.; Giber, J.

In: Sensors and Actuators, B: Chemical, Vol. 26, No. 1-3, 1995, p. 103-107.

Research output: Contribution to journalArticle

Réti, F, Fleischer, M, Gerblinger, J, Lampe, U, Várhegyi, EB, Perczel, IV, Meixner, H & Giber, J 1995, 'Comparison of the water effect on the resistance of different semiconducting metal oxides', Sensors and Actuators, B: Chemical, vol. 26, no. 1-3, pp. 103-107.
Réti F, Fleischer M, Gerblinger J, Lampe U, Várhegyi EB, Perczel IV et al. Comparison of the water effect on the resistance of different semiconducting metal oxides. Sensors and Actuators, B: Chemical. 1995;26(1-3):103-107.
Réti, F. ; Fleischer, M. ; Gerblinger, J. ; Lampe, U. ; Várhegyi, E. B. ; Perczel, I. V. ; Meixner, H. ; Giber, J. / Comparison of the water effect on the resistance of different semiconducting metal oxides. In: Sensors and Actuators, B: Chemical. 1995 ; Vol. 26, No. 1-3. pp. 103-107.
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