Comparison of photo- and deuteron-induced effects in amorphous chalcogenide layers

S. Kökényesi, J. Csikai, P. Raics, I. A. Szabo, S. Szegedi, A. Vitez

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

The effect of irradiation on the optical absorption edge and thickness of AsSe and As2S3 thin films has been investigated for different doses of 12H, 11H accelerated to energies of 80 and 180 keV. The kinetics and value of the stimulated changes were compared with photo-induced effects of laser illumination at 0.51 and 0.63 μm. It was observed that the optical band gap decreases and the thickness increases for both cases. The penetration length and depth profile of implanted ions with different energies were calculated and proposed for creating layer structures with depth-profiled optical parameters.

Original languageEnglish
Pages (from-to)209-214
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume326-327
DOIs
Publication statusPublished - Oct 1 2003
Event13th. International Symposium on Non-Oxide Glasses and New Optical Materials (ISNOG 13) - Pardubice, Czech Republic
Duration: Sep 9 2002Sep 13 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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