Comparison of photo- and deuteron-induced effects in amorphous chalcogenide layers

S. Kökényesi, J. Csikai, P. Raics, I. Szabó, S. Szegedi, A. Vitez

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The effect of irradiation on the optical absorption edge and thickness of AsSe and As2S3 thin films has been investigated for different doses of 1 2H, 1 1H accelerated to energies of 80 and 180 keV. The kinetics and value of the stimulated changes were compared with photo-induced effects of laser illumination at 0.51 and 0.63 μm. It was observed that the optical band gap decreases and the thickness increases for both cases. The penetration length and depth profile of implanted ions with different energies were calculated and proposed for creating layer structures with depth-profiled optical parameters.

Original languageEnglish
Pages (from-to)209-214
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume326-327
DOIs
Publication statusPublished - Oct 1 2003

Fingerprint

Deuterium
Optical band gaps
Light absorption
deuterons
Lighting
Irradiation
Ions
Thin films
Kinetics
Lasers
optical thickness
optical absorption
penetration
illumination
dosage
irradiation
energy
kinetics
thin films
profiles

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Comparison of photo- and deuteron-induced effects in amorphous chalcogenide layers. / Kökényesi, S.; Csikai, J.; Raics, P.; Szabó, I.; Szegedi, S.; Vitez, A.

In: Journal of Non-Crystalline Solids, Vol. 326-327, 01.10.2003, p. 209-214.

Research output: Contribution to journalArticle

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AU - Szegedi, S.

AU - Vitez, A.

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AB - The effect of irradiation on the optical absorption edge and thickness of AsSe and As2S3 thin films has been investigated for different doses of 1 2H, 1 1H accelerated to energies of 80 and 180 keV. The kinetics and value of the stimulated changes were compared with photo-induced effects of laser illumination at 0.51 and 0.63 μm. It was observed that the optical band gap decreases and the thickness increases for both cases. The penetration length and depth profile of implanted ions with different energies were calculated and proposed for creating layer structures with depth-profiled optical parameters.

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