Comparison of growth rate and surface structure of carbon nitride films, pulsed laser deposited in parallel, on axis planes

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Pairs of carbon nitride films have simultaneously been deposited by ArF excimer laser ablation of a graphite target in the 2-50 Pa nitrogen pressure window using a novel configuration. One substrate was parallel and 48 mm apart from the target in the traditional on-axis geometry, while the other was placed off-axis, in the target plane. The pressure dependence of the apparent growth rate, defined as the measured thickness per number of pulses, is significantly different for the two geometries. In the traditional configuration the growth rate is almost constant at approximately 0.003 and 0.025 nmpulse-1 for 1 and 5 Jcm-2, respectively. In the target plane it increases proportionally to the logarithm of N2 pressure for both fluences, reaching maximum values of 0.009 and 0.030 nmpulse-1 at 50 Pa. Complementary surface characterization by atomic force microscopy reveals that films of superior quality can be grown by this novel off-axis geometry, rendering it especially attractive in the high pressure domain.

Original languageEnglish
Pages (from-to)431-435
Number of pages5
JournalThin Solid Films
Volume453-454
DOIs
Publication statusPublished - Apr 1 2004

Fingerprint

carbon nitrides
Carbon nitride
Pulsed lasers
Surface structure
pulsed lasers
Geometry
geometry
Graphite
Excimer lasers
Laser ablation
configurations
logarithms
excimer lasers
pressure dependence
laser ablation
Atomic force microscopy
fluence
Nitrogen
graphite
atomic force microscopy

Keywords

  • Carbon nitride film
  • Off-axis configuration
  • Pulsed laser deposition
  • Target plane

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

@article{bba44bf85fd24d27a5ff30f78726196d,
title = "Comparison of growth rate and surface structure of carbon nitride films, pulsed laser deposited in parallel, on axis planes",
abstract = "Pairs of carbon nitride films have simultaneously been deposited by ArF excimer laser ablation of a graphite target in the 2-50 Pa nitrogen pressure window using a novel configuration. One substrate was parallel and 48 mm apart from the target in the traditional on-axis geometry, while the other was placed off-axis, in the target plane. The pressure dependence of the apparent growth rate, defined as the measured thickness per number of pulses, is significantly different for the two geometries. In the traditional configuration the growth rate is almost constant at approximately 0.003 and 0.025 nmpulse-1 for 1 and 5 Jcm-2, respectively. In the target plane it increases proportionally to the logarithm of N2 pressure for both fluences, reaching maximum values of 0.009 and 0.030 nmpulse-1 at 50 Pa. Complementary surface characterization by atomic force microscopy reveals that films of superior quality can be grown by this novel off-axis geometry, rendering it especially attractive in the high pressure domain.",
keywords = "Carbon nitride film, Off-axis configuration, Pulsed laser deposition, Target plane",
author = "T. Sz{\"o}r{\'e}nyi and Zs Geretovszky",
year = "2004",
month = "4",
day = "1",
doi = "10.1016/j.tsf.2003.11.121",
language = "English",
volume = "453-454",
pages = "431--435",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Comparison of growth rate and surface structure of carbon nitride films, pulsed laser deposited in parallel, on axis planes

AU - Szörényi, T.

AU - Geretovszky, Zs

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Pairs of carbon nitride films have simultaneously been deposited by ArF excimer laser ablation of a graphite target in the 2-50 Pa nitrogen pressure window using a novel configuration. One substrate was parallel and 48 mm apart from the target in the traditional on-axis geometry, while the other was placed off-axis, in the target plane. The pressure dependence of the apparent growth rate, defined as the measured thickness per number of pulses, is significantly different for the two geometries. In the traditional configuration the growth rate is almost constant at approximately 0.003 and 0.025 nmpulse-1 for 1 and 5 Jcm-2, respectively. In the target plane it increases proportionally to the logarithm of N2 pressure for both fluences, reaching maximum values of 0.009 and 0.030 nmpulse-1 at 50 Pa. Complementary surface characterization by atomic force microscopy reveals that films of superior quality can be grown by this novel off-axis geometry, rendering it especially attractive in the high pressure domain.

AB - Pairs of carbon nitride films have simultaneously been deposited by ArF excimer laser ablation of a graphite target in the 2-50 Pa nitrogen pressure window using a novel configuration. One substrate was parallel and 48 mm apart from the target in the traditional on-axis geometry, while the other was placed off-axis, in the target plane. The pressure dependence of the apparent growth rate, defined as the measured thickness per number of pulses, is significantly different for the two geometries. In the traditional configuration the growth rate is almost constant at approximately 0.003 and 0.025 nmpulse-1 for 1 and 5 Jcm-2, respectively. In the target plane it increases proportionally to the logarithm of N2 pressure for both fluences, reaching maximum values of 0.009 and 0.030 nmpulse-1 at 50 Pa. Complementary surface characterization by atomic force microscopy reveals that films of superior quality can be grown by this novel off-axis geometry, rendering it especially attractive in the high pressure domain.

KW - Carbon nitride film

KW - Off-axis configuration

KW - Pulsed laser deposition

KW - Target plane

UR - http://www.scopus.com/inward/record.url?scp=1542740533&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1542740533&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.11.121

DO - 10.1016/j.tsf.2003.11.121

M3 - Article

AN - SCOPUS:1542740533

VL - 453-454

SP - 431

EP - 435

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -