Comparison of FIB-induced physical and chemical etching

Y. K. Park, F. Paszti, M. Takai, C. Lehrer, L. Frey, H. Ryssel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The localized impurity incorporation during 30 keV Ga+ FIB processing such as physical etching and gas assisted etching with iodine gas has been investigated using the RBS mapping images by a 300 keV Be2+ microprobe with a beam spot size of 80 nm. Sputtering process simulation using TRIDYN code was performed to compare the etching rate and residual Ga atoms with those by experiment. Residual Ga atoms were found to distribute at and nearby the bottom of the etched area due to implantation and redeposition from the Ga FIB. The residual Ga concentration increased with the increase in ion dose up to 4×1016 Ga+/cm2 due to the implantation, while above 1×1017 Ga+/cm2 the Ga concentration gradually saturated due to the beginning of sputtering.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherIEEE
Pages820-823
Number of pages4
ISBN (Print)078034538X
Publication statusPublished - Dec 1 1999
EventProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
Duration: Jun 22 1998Jun 26 1998

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume2

Other

OtherProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
CityKyoto, Jpn
Period6/22/986/26/98

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Park, Y. K., Paszti, F., Takai, M., Lehrer, C., Frey, L., & Ryssel, H. (1999). Comparison of FIB-induced physical and chemical etching. In Proceedings of the International Conference on Ion Implantation Technology (pp. 820-823). (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2). IEEE.