Comparision of a.c. and d.c. measurement techniques using semiconducting Ga2O3 sensors

M. Fleischer, V. Wagner, G. Hacker, H. Meixner

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Ga2O3 thin films as a new base material for semiconductor gas sensors show stable semiconducting and gas-sensitive properties in a wide operating temperature range between 300 to 1000 °C. Due to this big operation temperature range different gas-Ga2O3 interactions and thus different gas sensitivities may be selected by choice of the operation temperature. A.c. and low frequency d.c. measurement techniques were applied to the sensors at different operation temperatures. At 600 °C and below significant polarization effects were encountered when using the d.c. technique and the resistances were bigger when compared with the a.c. technique. This is attributed to some ionic conductivity in the Ga2O3 layer. In this case, the a.c. technique has proven to be advantageous, yielding shorter response times and more stable readings. In the temperature range 800–1000 °C no difference between the a.c. and d.c. measurements occurs which points to a purely electronic conduction mechanism.

Original languageEnglish
Pages (from-to)85-88
Number of pages4
Journal"Sensors and Actuators, B: Chemical"
Volume26
Issue number1-3
DOIs
Publication statusPublished - Jan 1 1995

Keywords

  • A.c. and d.c. measurement techniques
  • Gallium oxide
  • Semiconducting sensors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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