Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy

T. Lohner, W. Skorupa, M. Fried, K. Vedam, N. Nguyen, R. Grötzschel, H. Bartsch, J. Gyulai

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