Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry

P. Petrik, T. Lohner, M. Fried, N. Q. Khánh, O. Polgár, J. Gyulai

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Abstract

Damage created by ion implantation of Ar+ ions into polycrystalline (p-Si) and single-crystalline silicon (c-Si) was characterized using Spectroscopic Ellipsometry (SE), Rutherford Backscattering Spectrometry (RBS), and Transmission Electron Microscopy (TEM). To create buried disorder, Ar+ ions with an energy of 100 keV were implanted into the samples. Ion doses were varied from 5 × 1013 to 6.75 × 1014 cm-2. The parameters of the implantation were kept identical for both p-Si and c-Si. Damage depth profiles have been investigated using SE, RBS, and TEM, in case of c-Si, and SE and TEM in case of p-Si. The results prove the applicability of spectroscopic ellipsometry for characterizing ion implantation caused damage even in polycrystalline silicon, where the RBS method cannot be applied. The RBS and TEM results basically supported the optical model of SE.

Original languageEnglish
Pages (from-to)84-89
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume147
Issue number1-4
DOIs
Publication statusPublished - Jan 1 1999

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Keywords

  • Ion implantation
  • Polysilicon
  • Rutherford backscattering spectrometry
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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