Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry

P. Petrik, T. Lohner, M. Fried, N. Q. Khánh, O. Polgár, J. Gyulai

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Damage created by ion implantation of Ar+ ions into polycrystalline (p-Si) and single-crystalline silicon (c-Si) was characterized using Spectroscopic Ellipsometry (SE), Rutherford Backscattering Spectrometry (RBS), and Transmission Electron Microscopy (TEM). To create buried disorder, Ar+ ions with an energy of 100 keV were implanted into the samples. Ion doses were varied from 5 × 1013 to 6.75 × 1014 cm-2. The parameters of the implantation were kept identical for both p-Si and c-Si. Damage depth profiles have been investigated using SE, RBS, and TEM, in case of c-Si, and SE and TEM in case of p-Si. The results prove the applicability of spectroscopic ellipsometry for characterizing ion implantation caused damage even in polycrystalline silicon, where the RBS method cannot be applied. The RBS and TEM results basically supported the optical model of SE.

Original languageEnglish
Pages (from-to)84-89
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume147
Issue number1-4
Publication statusPublished - Jan 1 1999

Fingerprint

Spectroscopic ellipsometry
Rutherford backscattering spectroscopy
Silicon
Ion implantation
Spectrometry
ellipsometry
ion implantation
backscattering
Crystalline materials
damage
Transmission electron microscopy
silicon
profiles
transmission electron microscopy
spectroscopy
Ions
ions
Polysilicon
implantation
disorders

Keywords

  • Ion implantation
  • Polysilicon
  • Rutherford backscattering spectrometry
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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abstract = "Damage created by ion implantation of Ar+ ions into polycrystalline (p-Si) and single-crystalline silicon (c-Si) was characterized using Spectroscopic Ellipsometry (SE), Rutherford Backscattering Spectrometry (RBS), and Transmission Electron Microscopy (TEM). To create buried disorder, Ar+ ions with an energy of 100 keV were implanted into the samples. Ion doses were varied from 5 × 1013 to 6.75 × 1014 cm-2. The parameters of the implantation were kept identical for both p-Si and c-Si. Damage depth profiles have been investigated using SE, RBS, and TEM, in case of c-Si, and SE and TEM in case of p-Si. The results prove the applicability of spectroscopic ellipsometry for characterizing ion implantation caused damage even in polycrystalline silicon, where the RBS method cannot be applied. The RBS and TEM results basically supported the optical model of SE.",
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T1 - Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry

AU - Petrik, P.

AU - Lohner, T.

AU - Fried, M.

AU - Khánh, N. Q.

AU - Polgár, O.

AU - Gyulai, J.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Damage created by ion implantation of Ar+ ions into polycrystalline (p-Si) and single-crystalline silicon (c-Si) was characterized using Spectroscopic Ellipsometry (SE), Rutherford Backscattering Spectrometry (RBS), and Transmission Electron Microscopy (TEM). To create buried disorder, Ar+ ions with an energy of 100 keV were implanted into the samples. Ion doses were varied from 5 × 1013 to 6.75 × 1014 cm-2. The parameters of the implantation were kept identical for both p-Si and c-Si. Damage depth profiles have been investigated using SE, RBS, and TEM, in case of c-Si, and SE and TEM in case of p-Si. The results prove the applicability of spectroscopic ellipsometry for characterizing ion implantation caused damage even in polycrystalline silicon, where the RBS method cannot be applied. The RBS and TEM results basically supported the optical model of SE.

AB - Damage created by ion implantation of Ar+ ions into polycrystalline (p-Si) and single-crystalline silicon (c-Si) was characterized using Spectroscopic Ellipsometry (SE), Rutherford Backscattering Spectrometry (RBS), and Transmission Electron Microscopy (TEM). To create buried disorder, Ar+ ions with an energy of 100 keV were implanted into the samples. Ion doses were varied from 5 × 1013 to 6.75 × 1014 cm-2. The parameters of the implantation were kept identical for both p-Si and c-Si. Damage depth profiles have been investigated using SE, RBS, and TEM, in case of c-Si, and SE and TEM in case of p-Si. The results prove the applicability of spectroscopic ellipsometry for characterizing ion implantation caused damage even in polycrystalline silicon, where the RBS method cannot be applied. The RBS and TEM results basically supported the optical model of SE.

KW - Ion implantation

KW - Polysilicon

KW - Rutherford backscattering spectrometry

KW - Spectroscopic ellipsometry

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