Comparative study of ion implantation caused anomalous surface damage in silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry

T. Lohner, M. Fried, N. Q. Khánh, P. Petrik, H. Wormeester, M. A. El-Sherbiny

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Damage created by ion implantation of 150 keV Ne+ and 800 keV Ar+ ions in single-crystalline silicon was characterized using Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS) in combination with channeling. Results from both methods unambiguously show the presence of a heavily damaged thin layer at the surface that is not predicted by TRIM calculations. The amorphization rate at the surface was found to be proportional to the nuclear energy deposition at the surface. It is demonstrated that SE cross-checked with RBS could be used for quantitative and accurate evaluation of the thickness of the damaged surface layer. The formation of this thin amorphous layer could be attributed to the redistribution of Si interstitials produced by the implantation process from the buried damaged region towards the surface and to a subsequent segregation process (W. Fukarek et al., Nucl. Instr. and Meth. B 127/128 (1997) 879).

Original languageEnglish
Pages (from-to)90-95
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume147
Issue number1-4
Publication statusPublished - Jan 1 1999

Fingerprint

Spectroscopic ellipsometry
Rutherford backscattering spectroscopy
Silicon
Ion implantation
Spectrometry
ellipsometry
ion implantation
backscattering
damage
silicon
spectroscopy
nuclear energy
Amorphization
implantation
surface layers
interstitials
Nuclear energy
evaluation
Ions
Crystalline materials

Keywords

  • Ellipsometry
  • Ion implantation
  • Rutherford backscattering spectrometry
  • Silicon
  • Surface damage

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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title = "Comparative study of ion implantation caused anomalous surface damage in silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry",
abstract = "Damage created by ion implantation of 150 keV Ne+ and 800 keV Ar+ ions in single-crystalline silicon was characterized using Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS) in combination with channeling. Results from both methods unambiguously show the presence of a heavily damaged thin layer at the surface that is not predicted by TRIM calculations. The amorphization rate at the surface was found to be proportional to the nuclear energy deposition at the surface. It is demonstrated that SE cross-checked with RBS could be used for quantitative and accurate evaluation of the thickness of the damaged surface layer. The formation of this thin amorphous layer could be attributed to the redistribution of Si interstitials produced by the implantation process from the buried damaged region towards the surface and to a subsequent segregation process (W. Fukarek et al., Nucl. Instr. and Meth. B 127/128 (1997) 879).",
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T1 - Comparative study of ion implantation caused anomalous surface damage in silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry

AU - Lohner, T.

AU - Fried, M.

AU - Khánh, N. Q.

AU - Petrik, P.

AU - Wormeester, H.

AU - El-Sherbiny, M. A.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Damage created by ion implantation of 150 keV Ne+ and 800 keV Ar+ ions in single-crystalline silicon was characterized using Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS) in combination with channeling. Results from both methods unambiguously show the presence of a heavily damaged thin layer at the surface that is not predicted by TRIM calculations. The amorphization rate at the surface was found to be proportional to the nuclear energy deposition at the surface. It is demonstrated that SE cross-checked with RBS could be used for quantitative and accurate evaluation of the thickness of the damaged surface layer. The formation of this thin amorphous layer could be attributed to the redistribution of Si interstitials produced by the implantation process from the buried damaged region towards the surface and to a subsequent segregation process (W. Fukarek et al., Nucl. Instr. and Meth. B 127/128 (1997) 879).

AB - Damage created by ion implantation of 150 keV Ne+ and 800 keV Ar+ ions in single-crystalline silicon was characterized using Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS) in combination with channeling. Results from both methods unambiguously show the presence of a heavily damaged thin layer at the surface that is not predicted by TRIM calculations. The amorphization rate at the surface was found to be proportional to the nuclear energy deposition at the surface. It is demonstrated that SE cross-checked with RBS could be used for quantitative and accurate evaluation of the thickness of the damaged surface layer. The formation of this thin amorphous layer could be attributed to the redistribution of Si interstitials produced by the implantation process from the buried damaged region towards the surface and to a subsequent segregation process (W. Fukarek et al., Nucl. Instr. and Meth. B 127/128 (1997) 879).

KW - Ellipsometry

KW - Ion implantation

KW - Rutherford backscattering spectrometry

KW - Silicon

KW - Surface damage

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