Comparative status of pulsed ion implantation

J. Gyulai, I. Krafcsik

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Ions produced by sources operating in a pulsed mode are currently explored for simultaneous doping and annealing. The first generation of experiments revealed some useful applications, but pointed at problems of the equipment as uniformity, dose and energy control, application of multiple pulses, etc. Similarly to lasers, pulsed ion beams (PIB) can also be used basically in two regimes. One leaves the irradiated surface in solid state, while the other reorders the top layer through a transient liquid phase. Both can be a doping and just an annealing process.

Original languageEnglish
Pages (from-to)275-279
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume37-38
Issue numberC
DOIs
Publication statusPublished - Feb 2 1989

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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