Comparative mass spectrometric study of AIII-BV compounds covered with a gold layer

R. Veresegyházy, I. Mojzes, B. Pécz

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In situ mass spectrometric analysis of gaseous species evolved from gold coated GaP, InP, GaAs, InAs during heat treatment is described. The thickness of gold was 50 nm and 15 nm and a linear heating rate of 150°C min-1 was applied. The gold greatly enhanced the decomposition of compound semiconductors. During annealing the Au is saturated with the AIII component, while the BV (volatile) component evaporates. On the evaporation vs temperature curves one or more peaks appear, depending on the thickness of gold layer and the type of compound semiconductor. The thicker the gold layer, the higher the volatile component loss and the higher the temperature of peak arsenic or phosphorus evolution.

Original languageEnglish
Pages (from-to)547-549
Number of pages3
JournalVacuum
Volume36
Issue number7-9
DOIs
Publication statusPublished - 1986

Fingerprint

Gold
gold
Semiconductor materials
Arsenic
Heating rate
arsenic
Phosphorus
phosphorus
Evaporation
heat treatment
Heat treatment
evaporation
Annealing
Decomposition
decomposition
Temperature
annealing
heating
temperature
curves

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Comparative mass spectrometric study of AIII-BV compounds covered with a gold layer. / Veresegyházy, R.; Mojzes, I.; Pécz, B.

In: Vacuum, Vol. 36, No. 7-9, 1986, p. 547-549.

Research output: Contribution to journalArticle

Veresegyházy, R. ; Mojzes, I. ; Pécz, B. / Comparative mass spectrometric study of AIII-BV compounds covered with a gold layer. In: Vacuum. 1986 ; Vol. 36, No. 7-9. pp. 547-549.
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