Comparative investigation of the Si/SiO2 interface layer containing SiC crystallites using spectroscopic ellipsometry, ion beam analysis and XPS

T. Lohner, A. Pongrácz, N. Q. Khánh, O. H. Krafcsik, K. Josepovits, P. Deák

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Abstract

It is known from earlier publications that SiC crystallites grow at the interface of a Si/SiO2 system during heat treatment in CO containing ambient. First 100 nm thick SiO2 layers were thermally grown on 〈100〉 Si substrates. The Si/SiO2 structures were heat treated in CO containing atmosphere for 20 and 102 hours at 1190 °C for investigation. Spectroellipsometry was applied to study the microstructure of the heat-treated samples. We assumed a layer at the Si/SiO2 interface that contains crystalline Si and crystalline SiC. After 20 and 102 hour annealing the layer thickness extracted from evaluation of ellipsometric data was 15 nm and 25 nm, the volume fraction of SiC was 38% and 89%, respectively. To confirm the results of the ellipsometry characterization we applied ion beam analysis and X-ray photoelectron spectroscopy. For determination of the carbon content a 4He+ ion beam of 3.5 MeV was selected to take advantage of the scattering cross section of carbon at 165° detection angle is about six times larger than the Rutherford type one.

Original languageEnglish
Pages (from-to)1337-1340
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number5
DOIs
Publication statusPublished - 2008

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crystallites
ellipsometry
ion beams
heat
carbon
scattering cross sections
heat treatment
photoelectron spectroscopy
atmospheres
microstructure
annealing
evaluation
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

@article{91aea43d80b04fe9b7b35ff739fcc34f,
title = "Comparative investigation of the Si/SiO2 interface layer containing SiC crystallites using spectroscopic ellipsometry, ion beam analysis and XPS",
abstract = "It is known from earlier publications that SiC crystallites grow at the interface of a Si/SiO2 system during heat treatment in CO containing ambient. First 100 nm thick SiO2 layers were thermally grown on 〈100〉 Si substrates. The Si/SiO2 structures were heat treated in CO containing atmosphere for 20 and 102 hours at 1190 °C for investigation. Spectroellipsometry was applied to study the microstructure of the heat-treated samples. We assumed a layer at the Si/SiO2 interface that contains crystalline Si and crystalline SiC. After 20 and 102 hour annealing the layer thickness extracted from evaluation of ellipsometric data was 15 nm and 25 nm, the volume fraction of SiC was 38{\%} and 89{\%}, respectively. To confirm the results of the ellipsometry characterization we applied ion beam analysis and X-ray photoelectron spectroscopy. For determination of the carbon content a 4He+ ion beam of 3.5 MeV was selected to take advantage of the scattering cross section of carbon at 165° detection angle is about six times larger than the Rutherford type one.",
author = "T. Lohner and A. Pongr{\'a}cz and Kh{\'a}nh, {N. Q.} and Krafcsik, {O. H.} and K. Josepovits and P. De{\'a}k",
year = "2008",
doi = "10.1002/pssc.200777791",
language = "English",
volume = "5",
pages = "1337--1340",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "5",

}

TY - JOUR

T1 - Comparative investigation of the Si/SiO2 interface layer containing SiC crystallites using spectroscopic ellipsometry, ion beam analysis and XPS

AU - Lohner, T.

AU - Pongrácz, A.

AU - Khánh, N. Q.

AU - Krafcsik, O. H.

AU - Josepovits, K.

AU - Deák, P.

PY - 2008

Y1 - 2008

N2 - It is known from earlier publications that SiC crystallites grow at the interface of a Si/SiO2 system during heat treatment in CO containing ambient. First 100 nm thick SiO2 layers were thermally grown on 〈100〉 Si substrates. The Si/SiO2 structures were heat treated in CO containing atmosphere for 20 and 102 hours at 1190 °C for investigation. Spectroellipsometry was applied to study the microstructure of the heat-treated samples. We assumed a layer at the Si/SiO2 interface that contains crystalline Si and crystalline SiC. After 20 and 102 hour annealing the layer thickness extracted from evaluation of ellipsometric data was 15 nm and 25 nm, the volume fraction of SiC was 38% and 89%, respectively. To confirm the results of the ellipsometry characterization we applied ion beam analysis and X-ray photoelectron spectroscopy. For determination of the carbon content a 4He+ ion beam of 3.5 MeV was selected to take advantage of the scattering cross section of carbon at 165° detection angle is about six times larger than the Rutherford type one.

AB - It is known from earlier publications that SiC crystallites grow at the interface of a Si/SiO2 system during heat treatment in CO containing ambient. First 100 nm thick SiO2 layers were thermally grown on 〈100〉 Si substrates. The Si/SiO2 structures were heat treated in CO containing atmosphere for 20 and 102 hours at 1190 °C for investigation. Spectroellipsometry was applied to study the microstructure of the heat-treated samples. We assumed a layer at the Si/SiO2 interface that contains crystalline Si and crystalline SiC. After 20 and 102 hour annealing the layer thickness extracted from evaluation of ellipsometric data was 15 nm and 25 nm, the volume fraction of SiC was 38% and 89%, respectively. To confirm the results of the ellipsometry characterization we applied ion beam analysis and X-ray photoelectron spectroscopy. For determination of the carbon content a 4He+ ion beam of 3.5 MeV was selected to take advantage of the scattering cross section of carbon at 165° detection angle is about six times larger than the Rutherford type one.

UR - http://www.scopus.com/inward/record.url?scp=77951106861&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951106861&partnerID=8YFLogxK

U2 - 10.1002/pssc.200777791

DO - 10.1002/pssc.200777791

M3 - Article

AN - SCOPUS:77951106861

VL - 5

SP - 1337

EP - 1340

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 5

ER -