Comments on the properties of an NH4OH‐H2O2 etch on epitaxial GaAs

Radácsi, I. Mojzes, J. Pfeifer

Research output: Contribution to journalArticle

Abstract

The etching rate of the NH4OH : H2O2 : H2O = 1:4:20 etch was determined on epitaxial GaAs films and bulk GaAs monocrystals. The etching process has a rather large scattering at the start of the process depending on the origin and properties of films. The etching rate of epitaxial layers approaches the value of 2 μm/min, characteristic of bulk crystals. Surfaces treated with the 1:4:20 etch are applicable to ohmic contacts of Gunn diodes.

Original languageEnglish
Pages (from-to)747-751
Number of pages5
JournalKristall und Technik
Volume15
Issue number6
DOIs
Publication statusPublished - 1980

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Etching
etching
Gunn diodes
Ohmic contacts
Epitaxial films
Epitaxial layers
electric contacts
Scattering
Crystals
single crystals
scattering
crystals
gallium arsenide

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Comments on the properties of an NH4OH‐H2O2 etch on epitaxial GaAs. / Radácsi; Mojzes, I.; Pfeifer, J.

In: Kristall und Technik, Vol. 15, No. 6, 1980, p. 747-751.

Research output: Contribution to journalArticle

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