Comments on “misorientation in gaas on si grown by migration-enhanced epitaxy”

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2 Citations (Scopus)

Abstract

It is shown that the data reported by Nozawa and Horikoshi [Jpn. J. Appl. Phys. 32 (1993) 626] on the tilting of GaAs layers grown on Si by migration-enhanced epitaxy can be explained by the layer-by-layer nature of the growth process. It is also pointed out that the azimuthal angular shift of the GaAs-Si X-ray rocking curve peak position from the substrate miscut direction does not hint to the in-plane rotation of the epilayer as a whole.

Original languageEnglish
Pages (from-to)4754-4755
Number of pages2
JournalJapanese Journal of Applied Physics
Volume32
Issue number10 R
DOIs
Publication statusPublished - Oct 1993

Keywords

  • Gaas on si
  • Growth mode
  • Migration enhanced epitaxy
  • Tilt

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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